Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth

Julie E. Nkanta; Ramón Maldonado-Basilio; Sawsan Abdul-Majid; Jessica Zhang; Trevor J. Hall

doi:10.1117/12.2036820

1 February 2014 Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth

Julie E. Nkanta, Ramón Maldonado-Basilio, Sawsan Abdul-Majid, Jessica Zhang, Trevor J. Hall

Author Affiliations +

Proceedings Volume 9007, Broadband Access Communication Technologies VIII; 900708 (2014) https://doi.org/10.1117/12.2036820
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

An exhausted capacity of current Passive Optical Networks has been anticipated as bandwidth-hungry applications such as HDTV and 3D video become available to end-users. To enhance their performance, the next generation optical access networks have been proposed, using optical carriers allocated within the E-band (1360-1460 nm). It is partly motivated by the low-water peak fiber being manufactured by Corning. At these wavelengths, choices for low cost optical amplifiers, with compact size, low energy consumption and feasibility for integration with other optoelectronic components are limited, making the semiconductor optical amplifiers (SOA) a realistic solution. An experimental characterization of a broadband and low polarization sensitive asymmetric multi quantum well (MQW) SOA operating in the E-band is reported. The SOA device is composed of nine 6 nm In_1-xGa_xAsyP_1-y 0.2% tensile strained asymmetric MQW layers sandwiched between nine latticed matched 6 nm InGaAsP barrier layers. The active region is grown on an n-doped InP substrate and buried by p-doped InGaAsP layers. The SOA devices have 7-degrees tilt anti-reflected coated facets, with 2 μm ridge width, and a cavity length of 900 μm. For input powers of -10 dBm and -20 dBm, a maximum gain of 20 dB at 1360 nm with a polarization insensitivity under 3 dB for over 90 nm bandwidth is measured. Polarization sensitivity of less than 0.5 dB is observed for some wavelengths. Obtained results indicate a promising SOA with broadband amplification, polarization insensitivity and high gain. These SOAs were designed and characterized at the Photonics Technology Laboratory, University of Ottawa, Canada.

Citation Download Citation

Julie E. Nkanta, Ramón Maldonado-Basilio, Sawsan Abdul-Majid, Jessica Zhang, and Trevor J. Hall "Asymmetric MQW semiconductor optical amplifier with low-polarization sensitivity of over 90-nm bandwidth", Proc. SPIE 9007, Broadband Access Communication Technologies VIII, 900708 (1 February 2014); https://doi.org/10.1117/12.2036820

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Polarization

Semiconductor optical amplifiers

Photonics

Optics manufacturing

Quantum wells

Cladding

Optical amplifiers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years