Paper
17 April 2014 Durability of Ru-based EUV masks and the improvement
Suyoung Lee, Jungyoup Kim, Soo-Wan Koh, Ilyong Jang, Jaehyuck Choi, Hyungho Ko, Hwan-Seok Seo, Seong-Sue Kim, Byung Gook Kim, Chan-Uk Jeon
Author Affiliations +
Abstract
In EUV Lithography, an absence of promising candidate of EUV pellicle demands new requirements of EUV mask cleaning which satisfy the cleaning durability and removal efficiency of the various contaminations from accumulated EUV exposure. It is known that the cleaning with UV radiation is effective method of variety of contaminants from surface, while it reduces durability of Ru capping layer. To meet the expectation of EUV mask lifetime, it is essential to understand the mechanism of Ru damage. In this paper, we investigate dominant source of Ru damage using cleaning method with UV radiation. Based on the mechanism, we investigate several candidates of capping to increase the tolerance from the cycled UV cleaning. In addition, we study durability difference depending on the deposition method of Ru capping. From these studies, it enables to suggest proper capping material, stack and cleaning process.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suyoung Lee, Jungyoup Kim, Soo-Wan Koh, Ilyong Jang, Jaehyuck Choi, Hyungho Ko, Hwan-Seok Seo, Seong-Sue Kim, Byung Gook Kim, and Chan-Uk Jeon "Durability of Ru-based EUV masks and the improvement", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480J (17 April 2014); https://doi.org/10.1117/12.2046556
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KEYWORDS
Ruthenium

Ultraviolet radiation

Extreme ultraviolet

Extreme ultraviolet lithography

Transmission electron microscopy

Photomasks

Silica

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