An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length

Martin P. Karnett; Robert E. Dunham

doi:10.1117/12.968392

1 January 1988 An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length

Martin P. Karnett, Robert E. Dunham

Proceedings Volume 0921, Integrated Circuit Metrology, Inspection, and Process Control II; (1988) https://doi.org/10.1117/12.968392
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

An improved SEM technique to determine MOS transistor effective channel length is described. The technique utilizes two different chemical etchants under strong illumination to selectively stain/etch the doped regions of the device. Comparison of the SEM measurements to data provided by two different electrical measurement methods shows good agreement (within 0.1 μm).

Citation Download Citation

Martin P. Karnett and Robert E. Dunham "An Improved SEM Technique For Accurate Determination Of MOSFET Channel Length", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968392

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