Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects

Brad Thiel; Michael Lercel; Benjamin Bunday; Matt Malloy

doi:10.1117/12.2069302

2 October 2014 Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects

Brad Thiel, Michael Lercel, Benjamin Bunday, Matt Malloy

Proceedings Volume 9236, Scanning Microscopies 2014; 92360E (2014) https://doi.org/10.1117/12.2069302
Event: SPIE Scanning Microscopies, 2014, Monterey, California, United States

Abstract

SEMATECH has initiated a program to accelerate the development and commercialization of multi-electron beam based technologies as successor for wafer defect inspection in high volume semiconductor manufacturing. This paper develops the basic electron-optical performance requirements and establishes criteria for tool specifications. The performance variations within a large array of electron beams must be minimal in order to maximize defect capture rates while simultaneously minimizing false counts, so a series of experimental evaluations are described to quantify the random and systematic variations in beam current, spot size, detector channel noise level, and defect sensitivity.

Citation Download Citation

Brad Thiel, Michael Lercel, Benjamin Bunday, and Matt Malloy "Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects", Proc. SPIE 9236, Scanning Microscopies 2014, 92360E (2 October 2014); https://doi.org/10.1117/12.2069302

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