Optimization of near-field scanning optical lithography

Ben S. Routley; John L. Holdsworth; Andrew J. Fleming

doi:10.1117/12.2086073

19 March 2015 Optimization of near-field scanning optical lithography

Ben S. Routley, John L. Holdsworth, Andrew J. Fleming

Proceedings Volume 9423, Alternative Lithographic Technologies VII; 94230F (2015) https://doi.org/10.1117/12.2086073
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

This article describes two- and three-dimensional optical simulations for determining optimal conditions for near-field scanning optical lithography. It was found that a combination of 30-nm thick photoresist and 50-nm thick anti-reflective coating will yield optimal results with 405 nm incident light and a hollow-cantilever probe with 100-nm aperture width. In addition to identifying the optimal conditions, the sensitivity of the resolution with respect to each parameter is explored and plotted. The mechanisms behind each trend are described with supporting simulation data.

Citation Download Citation

Ben S. Routley, John L. Holdsworth, and Andrew J. Fleming "Optimization of near-field scanning optical lithography", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94230F (19 March 2015); https://doi.org/10.1117/12.2086073

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