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5 March 2022 Back-gated devices from amorphous GaOx grown by ALD for BEOL integration
Catherine Dubourdieu, Charlotte Van Dijck, Sourish Banerjee, Florian Maudet, Veeresh Deshpande
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Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC120020G (2022) https://doi.org/10.1117/12.2620759
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
In this presentation, we discuss the integration of amorphous GaOx into back-gated transistors. The a-GaOx films (22 -100 nm) were grown by plasma-enhanced atomic layer deposition (PE-ALD). The conductivity of the films was tuned by changing the O2 plasma exposure time during the ALD cycles, which determines the content in oxygen vacancies. Back-gated transistors were fabricated with Al2O3 gate oxide on highly-doped Si substrate, with or without encapsulation of the top surface. The electrical properties of the devices will be discussed. Low sub-threshold swing (~150 mV/dec), on/off ratio >105 and operating drain voltage below 5V were obtained.
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Catherine Dubourdieu, Charlotte Van Dijck, Sourish Banerjee, Florian Maudet, and Veeresh Deshpande "Back-gated devices from amorphous GaOx grown by ALD for BEOL integration", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020G (5 March 2022); https://doi.org/10.1117/12.2620759
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KEYWORDS
Oxides
Atomic layer deposition
Back end of line
Gallium
Transistors
Oxygen
Silicon
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