Low-energy electron exposure and reactive ion etching characteristics of hybrid EUV photoresist synthesized by molecular atomic layer deposition

Won-Il Lee; Ashwanth Subramanian; Nikhil Tiwale; Dan Le; Su Min Hwang; Jiyoung Kim; Chang-Yong Nam

doi:10.1117/12.2641794

11 November 2022 Low-energy electron exposure and reactive ion etching characteristics of hybrid EUV photoresist synthesized by molecular atomic layer deposition

Won-Il Lee, Ashwanth Subramanian, Nikhil Tiwale, Dan Le, Su Min Hwang, Jiyoung Kim, Chang-Yong Nam

Author Affiliations +

Proceedings Volume PC12292, International Conference on Extreme Ultraviolet Lithography 2022; PC122920K (2022) https://doi.org/10.1117/12.2641794
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

We investigated the hydroquinone (HQ)/trimethylaluminum (TMA) hybrid thin film synthesized by molecular atomic layer deposition (MALD) as a potential extreme ultraviolet (EUV) photoresist. The patterning characteristics of the resist was studied using electron beam lithography (EBL) and low-energy electron microscopy (LEEM), identifying energy-dependent critical exposure dose and contrast under wet development. Also identified were the reactive ion etching (RIE) characteristics, demonstrating a dry development parameter window, achieving the maximum etch contrast of ~10 nm between the regions with and without electron exposure. The results suggest the MALD approach as a viable synthesis route for developing new hybrid EUV photoresists.

Conference Presentation

Citation Download Citation

Won-Il Lee, Ashwanth Subramanian, Nikhil Tiwale, Dan Le, Su Min Hwang, Jiyoung Kim, and Chang-Yong Nam "Low-energy electron exposure and reactive ion etching characteristics of hybrid EUV photoresist synthesized by molecular atomic layer deposition", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC122920K (11 November 2022); https://doi.org/10.1117/12.2641794

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