Presentation
21 March 2023 Recent micro-LED technology for display applications based on GaN pendeo-epitaxy using SOI nanopillars
Saber Hammami, Nabil Labchir, Kilian Baril, Pierre Marie Coulon, Blandine Alloing, Jesus Zuniga Perez, Cécile Gourgon, Matthew Charles, Ludovic Dupré
Author Affiliations +
Abstract
As the new display technology, micrometer-sized light emitting diodes (micro-LEDs) have the advantages of high resolution, and high luminance. In this work we now present a new realization method of micro-LEDs based on this bottom-up process. A comprehensive analysis of the electro-optical properties of this new type of micro-LED has been performed. In addition, we will discuss one of the major challenges for active matrix micro-displays: the transfer of micro-LED platelets on a host substrate. Therefore, our approach will provide a promising route for the fabrication of bottom up, highly efficient micro-LED based displays.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saber Hammami, Nabil Labchir, Kilian Baril, Pierre Marie Coulon, Blandine Alloing, Jesus Zuniga Perez, Cécile Gourgon, Matthew Charles, and Ludovic Dupré "Recent micro-LED technology for display applications based on GaN pendeo-epitaxy using SOI nanopillars", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649730
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KEYWORDS
Gallium nitride

Light emitting diodes

Nanotechnology

Silicon

External quantum efficiency

Electro optics

Epitaxy

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