As the new display technology, micrometer-sized light emitting diodes (micro-LEDs) have the advantages of high resolution, and high luminance. In this work we now present a new realization method of micro-LEDs based on this bottom-up process. A comprehensive analysis of the electro-optical properties of this new type of micro-LED has been performed. In addition, we will discuss one of the major challenges for active matrix micro-displays: the transfer of micro-LED platelets on a host substrate. Therefore, our approach will provide a promising route for the fabrication of bottom up, highly efficient micro-LED based displays.
In order to drop the dislocation density and reduce the manufacturing costs, GaN can be deposited on substrates that possess a high density of growth sites. In our present strategy, we simultaneously focus on overcoming the misorientation and dislocation problems. To achieve this goal, nanopatterning of GaN/AlN layers deposited on Silicon-On-Insulator (SOI) substrates is used in order to fabricate nanopillar arrays, using nanoimprint lithography (NIL) and plasma etching. This will be reflected by the high-quality epitaxial layer of GaN. The latter will be used as an active layer to produce a LED array having a better emission quality.
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