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Here, we present a silicone engineered anisotropic lithography of the organic light-emitting semiconductor (OLES) that in-situ forms a non-volatile etch-blocking layer during reactive ion etching. [1,2] This unique feature not only slows the etch rate but also enhances the anisotropy of etch direction, leading to gain delicate control in forming ultrahigh-density multicolor OLES patterns (up to 4,500 pixels per inch) through photolithography. This patterning strategy inspired by silicon etching chemistry is expected to provide new insights into ultrahigh-density OLEDoS (OLED on Silicon) microdisplays.
Do Hwan Kim
"Silicone-engineered anisotropic lithography for solution-processed, ultrahigh-density OLEDs", Proc. SPIE PC12659, Organic and Hybrid Light Emitting Materials and Devices XXVII, PC126590P (1 October 2023); https://doi.org/10.1117/12.2675984
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Do Hwan Kim, "Silicone-engineered anisotropic lithography for solution-processed, ultrahigh-density OLEDs," Proc. SPIE PC12659, Organic and Hybrid Light Emitting Materials and Devices XXVII, PC126590P (1 October 2023); https://doi.org/10.1117/12.2675984