Presentation
22 November 2023 EUV resists fundamental studies at NewSUBARU synchrotron light facility especially on EUV high-NA lithography
Takeo Watanabe, Shinji Yamakawa, Tetsuo Harada
Author Affiliations +
Abstract
Since 1996, the program of the research and development (R&D) on EUVL has begun at the Laboratory of Advanced Science and Technology for Industry, Himeji Institute Technology (HIT) (present University of Hyogo) using the NewSUBARU synchrotron light source. For EUV resists, it was prepared that 1) the high-precision-resist-sensitivity evaluation tool, 2) the outgassing testing with quadrupole mass spectrometry and carbon contamination growth measurement with in-situ ellipsometry, 3) the transmittance measurement tool, and 4) the EUV interference lithography in 10 nm hp pattering. Recently, it is prepared that toward low LWR achievement by 1) the resonant soft X-ray scattering (RSoXS) in the transmission mode and 2) PEEM to evaluate the chemical contents spatial distribution, and 3) the out-of-band (OoB) reflectometer and transmittance measurement tool. In addition, it is prepared that the RSoXS in the reflectance mode to evaluate layer analysis preventing from pattern collapse.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeo Watanabe, Shinji Yamakawa, and Tetsuo Harada "EUV resists fundamental studies at NewSUBARU synchrotron light facility especially on EUV high-NA lithography", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC1275008 (22 November 2023); https://doi.org/10.1117/12.2687071
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KEYWORDS
Extreme ultraviolet

Synchrotrons

Extreme ultraviolet lithography

Lithography

Line width roughness

Imaging systems

Industry

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