Presentation
22 November 2023 Simultaneous 3d characterization and repair of EUV mask defects
Sang-Joon Cho, Byoung-Woon Ahn, Ah-Jin Jo, Brian Grenon, Yong-Woon Lim, Seung Yeon Sung, Dongchun Lee, Stefan Kaemmer
Author Affiliations +
Abstract
As semiconductor processes have been developed into nanometer-level processes, the transition from photo- to EUV-processes has accelerated for nano-pattern production. In line with this trend, the need for analytical techniques of sub-nanometer defects in 3D shapes and chemical components is significantly increasing. Correcting various types of defects in the EUV process becomes essential. We have developed defect characterization and defect-repairing techniques using nano-machining and AFM technology for the EUV and optical photomasks. The defects identified in the mask are primarily divided into a soft defect, which occurs during the process and sits randomly in the mask, and a hard defect, which mainly indicates a damaged or altered pattern. Based on the inline AFM system introduced as semiconductor inspection equipment, I would like to introduce the potential technologies to analyze the 3D shape and mechanical and chemical properties of defects occurring at the EUV or photomasks.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang-Joon Cho, Byoung-Woon Ahn, Ah-Jin Jo, Brian Grenon, Yong-Woon Lim, Seung Yeon Sung, Dongchun Lee, and Stefan Kaemmer "Simultaneous 3d characterization and repair of EUV mask defects", Proc. SPIE PC12751, Photomask Technology 2023, PC127510K (22 November 2023); https://doi.org/10.1117/12.2688715
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KEYWORDS
Extreme ultraviolet

3D mask effects

Chemical analysis

Photomasks

Semiconductors

Shape analysis

EUV optics

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