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9 March 2024 Triboelectric pressure sensors fabricated with high-quality crystalline GaN nanowires grown on Si(111)
Siyun Noh, Jaehyeok Shin, Jinseong Lee, Seungwhan Jhee, Mee-Yi Ryu, Jin Soo Kim
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860I (2024) https://doi.org/10.1117/12.3000743
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
We discuss the device performances of triboelectric pressure sensors (TEPSs) using GaN nanowires (NWs) as a response medium. TEPSs were fabricated by stacking polydimethylsiloxane directly on GaN NWs formed on Si(111) and forming an electrode underneath the substrate. When hammering the TEPS with a finger, the output voltage was measured to be 14.7 V, which is 2.5 times higher than that (5.9 V) of the TEPS without GaN NWs. The output voltage of TEPSs rarely changed even after the 100-cyclic measurements. These results will be discussed using an analytical model with the spatial electrostatic induction of GaN NWs.
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Siyun Noh, Jaehyeok Shin, Jinseong Lee, Seungwhan Jhee, Mee-Yi Ryu, and Jin Soo Kim "Triboelectric pressure sensors fabricated with high-quality crystalline GaN nanowires grown on Si(111)", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860I (9 March 2024); https://doi.org/10.1117/12.3000743
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KEYWORDS
Gallium nitride
Nanowires
Crystals
Sensors
Polydimethylsiloxane
Dielectrics
Organic materials
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