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9 March 2024 Determination of deformation potentials of InGaN alloy materials based on photoluminescence polarization measurements under uniaxial stress application
Atsushi A. Yamaguchi, Maho Ohara, Tomohiro Makino, Tatsushi Hamaguchi, Rintaro Koda, Keito Mori-Tamamura
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC128860V (2024) https://doi.org/10.1117/12.2691406
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
InGaN quantum well (QW) based vertical-cavity surface-emitting lasers, which are usually fabricated on the c-plane GaN substrates, have a problem of unstable polarization since the c-plane has high symmetry. A candidate for solving this problem is to introduce optical anisotropy by breaking the six-fold symmetry of c-plane InGaN-QWs. In this study, we proposed that the anisotropic strain can be introduced by bending InGaN-QWs so that lasing polarization can be stabilized, and we have performed demonstrative optical measurements of such polarization control in InGaN-QWs. From the results of the experiment, we have determined the deformation potentials of InGaN alloy materials.
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Atsushi A. Yamaguchi, Maho Ohara, Tomohiro Makino, Tatsushi Hamaguchi, Rintaro Koda, and Keito Mori-Tamamura "Determination of deformation potentials of InGaN alloy materials based on photoluminescence polarization measurements under uniaxial stress application", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC128860V (9 March 2024); https://doi.org/10.1117/12.2691406
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KEYWORDS
Polarization
Deformation
Indium gallium nitride
Alloys
Photoluminescence
Anisotropy
Gallium nitride
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