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9 March 2024 Understanding the plastic relaxation of strained InGaN layers towards substrates for nitride-based red light emitters
Joanna Moneta, Grzegorz Muziol, Marcin Krysko, Tobias Schulz, Robert Kernke, Carsten Richter, Martin Albrecht, Julita Smalc-Koziorowska
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288613 (2024) https://doi.org/10.1117/12.3001339
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
The idea of using relaxed InGaN as templates for the growth of InGaN-based devices has emerged in recent years. We investigate the process of plastic strain relaxation to exploit it for the preparation of good quality InGaN/GaN templates. The (0001)-oriented InGaN relaxes by the introduction of (a+c) misfit dislocations. Several peculiar phenomena of this mechanism are observed: unusual dislocation core dissociation, introduction of crystallographic tilt, anisotropic relaxation and formation of the point defect agglomerations as the traces of gliding dislocations. All of the mentioned aspects have to be addressed in order to prepare uniform highly relaxed InGaN/GaN templates.
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Joanna Moneta, Grzegorz Muziol, Marcin Krysko, Tobias Schulz, Robert Kernke, Carsten Richter, Martin Albrecht, and Julita Smalc-Koziorowska "Understanding the plastic relaxation of strained InGaN layers towards substrates for nitride-based red light emitters", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288613 (9 March 2024); https://doi.org/10.1117/12.3001339
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KEYWORDS
Indium gallium nitride
Plastics
Gallium nitride
Compliance
Elasticity
Optical lithography
Porosity
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