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13 March 2024 Effect of Ge-substrate thickness on 940-nm VCSEL performance
Sara-Jayne Gillgrass, Craig P. Allford, Jack Baker, Andrew Johnson, Iwan Davies, Samuel Shutts, Peter M. Smowton
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Proceedings Volume PC12904, Vertical-Cavity Surface-Emitting Lasers XXVIII; PC1290408 (2024) https://doi.org/10.1117/12.3001658
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Consumer applications of VCSEL arrays demand larger sizes and improved reliability. Ge-substrates are drop-in replacements for GaAs, whilst offering additional benefits. Thinner Ge-substrates are readily available due to photovoltaic supply chains, offering a cheaper cost per wafer. We report on device performance of identical 940-nm VCSELs, grown on 675µm, 500µm and 225µm thick Ge-substrates. Threshold current densities vary by less than 10μA/µm2 and 36μA/µm2 at the wafer centre between 675µm and, 500µm and 225µm respectively. A 3nm wavelength shift with decreasing substrate thickness is also observed. Results show a potential route to larger manufacturing volumes with lower cost per wafer.
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Sara-Jayne Gillgrass, Craig P. Allford, Jack Baker, Andrew Johnson, Iwan Davies, Samuel Shutts, and Peter M. Smowton "Effect of Ge-substrate thickness on 940-nm VCSEL performance", Proc. SPIE PC12904, Vertical-Cavity Surface-Emitting Lasers XXVIII, PC1290408 (13 March 2024); https://doi.org/10.1117/12.3001658
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KEYWORDS
Vertical cavity surface emitting lasers
Semiconducting wafers
Manufacturing
Chip manufacturing
Fabrication
Gallium arsenide
High volume manufacturing
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