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13 March 2024 B containing quantum wells for ultraviolet light emitting devices
Peter Parbrook, Peter Milner, Vitaly Z. Zubialevich, Thomas O'Connor, Sandeep Singh, Brian Corbett
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Proceedings Volume PC12906, Light-Emitting Devices, Materials, and Applications XXVIII; PC129060E (2024) https://doi.org/10.1117/12.3002651
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
III-N UV LEDs are currently of major interest for applications such as sterilisation (UVC) and phototherapy (UVB). Most work to date has focussed on the AlGaN system which is relatively well understood, but this limits the possibility for bandgap engineering in the active region structure. In this presentation we will outline the demonstration of a UV Light emitting diode operating around 340 nm using boron containing (BAlGaN) quantum wells. The device exhibited a higher output intensity compare to the boron free reference sample prepared at the same time. The potential for using such alloys for UVB and UVC devices will be discussed.
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Peter Parbrook, Peter Milner, Vitaly Z. Zubialevich, Thomas O'Connor, Sandeep Singh, and Brian Corbett "B containing quantum wells for ultraviolet light emitting devices", Proc. SPIE PC12906, Light-Emitting Devices, Materials, and Applications XXVIII, PC129060E (13 March 2024); https://doi.org/10.1117/12.3002651
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KEYWORDS
Quantum devices
Quantum wells
Boron
Ultraviolet radiation
Quantum light
Alloys
Quantum operations
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