Presentation
13 March 2024 GaSb-based 1.5 µm quantum dot emitters
Teemu Hakkarainen, Joonas Hilska, Johannes Michl, Abhiroop Chellu, Lucie Leguay, Tobias Huber-Loyola, Esperanza Luna, Andrei Schliwa, Sven Höfling, Mircea Guina
Author Affiliations +
Abstract
Solid-state single and entangled photon emitters linked coherently over long distances with optical fibers enable a new generation of quantum-based communications networks. Currently, epitaxial semiconductor quantum dots (QDs) pave the way as a scalable approach for fabricating deterministic non-classical light sources that can be integrated with other photonic or electronic components in miniaturized form. Here, we present a new quantum material system based on GaSb QDs formed by filling droplet-etched nanoholes [1,2], a technique which has been previously used for the state-of-the-art single- and entangled-photon sources in the GaAs-based materials emitting at wavelengths shorter than 800 nm [3-6]. We show that while the GaSb QDs exhibit high homogeneity and small fine structure splitting similarly to their GaAs counterparts, they also enable single-photon emission in the 3rd telecom window [7] with prospects for extending towards 2µm. These properties make them ideal candidates for quantum photonic applications requiring compatibility with Si-photonics and fiber-based telecom. [1] J. Hilska et al. Cryst. Growth Des. 21 1917−1923, 2021 [2] A. Chellu et al. APL Materials 9, pp
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Teemu Hakkarainen, Joonas Hilska, Johannes Michl, Abhiroop Chellu, Lucie Leguay, Tobias Huber-Loyola, Esperanza Luna, Andrei Schliwa, Sven Höfling, and Mircea Guina "GaSb-based 1.5 µm quantum dot emitters", Proc. SPIE PC12911, Quantum Computing, Communication, and Simulation IV, PC1291112 (13 March 2024); https://doi.org/10.1117/12.3004982
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KEYWORDS
Quantum dots

Quantum emitters

Emission wavelengths

Fabrication

Fiber optics

Gallium antimonide

Materials properties

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