Solid-state single and entangled photon emitters linked coherently over long distances with optical fibers enable a new generation of quantum-based communications networks. Currently, epitaxial semiconductor quantum dots (QDs) pave the way as a scalable approach for fabricating deterministic non-classical light sources that can be integrated with other photonic or electronic components in miniaturized form. Here, we present a new quantum material system based on GaSb QDs formed by filling droplet-etched nanoholes [1,2], a technique which has been previously used for the state-of-the-art single- and entangled-photon sources in the GaAs-based materials emitting at wavelengths shorter than 800 nm [3-6]. We show that while the GaSb QDs exhibit high homogeneity and small fine structure splitting similarly to their GaAs counterparts, they also enable single-photon emission in the 3rd telecom window [7] with prospects for extending towards 2µm. These properties make them ideal candidates for quantum photonic applications requiring compatibility with Si-photonics and fiber-based telecom.
[1] J. Hilska et al. Cryst. Growth Des. 21 1917−1923, 2021
[2] A. Chellu et al. APL Materials 9, pp
This research focuses on strain-free GaSb/AlGaSb quantum dots (QDs) grown via local droplet etching (LDE) for their potential in quantum photonic applications. These QDs exhibit excitonic emission in the telecom S-band with a narrow ensemble emission linewidth. Through theoretical modeling in addition to previous photoluminescence experiments, the study investigates the electronic band structure, dipole transitions, and dimensions of the GaSb/AlGaSb QDs. Key findings include insights into the indirect-direct bandgap crossover based on QD dimensions and the comparison of dipole transitions with photoluminescence measurements. The results contribute to the practical integration of these QDs in quantum photonic devices and fiber optics-based quantum key distribution networks.
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