Coater/developer-based patterning techniques to improve tight pitches towards high-NA EUV

Kanzo Kato; Lior Huli; Steven Grzeskowiak; Alexandra Krawicz; Eric Liu; Akiteru Ko; Satoru Shimura; Shinichiro Kawakami; Cong Q. Dinh; Takahiro Kitano; Seiji Nagahara; Luciana Meli; Indira Seshadri; Martin Burkhardt; Karen Petrillo

doi:10.1117/12.3010880

10 April 2024 Coater/developer-based patterning techniques to improve tight pitches towards high-NA EUV

Kanzo Kato, Lior Huli, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Cong Q. Dinh, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, Karen Petrillo

Author Affiliations +

Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530Y (2024) https://doi.org/10.1117/12.3010880
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

As the semiconductor industry continues to push the limits of integrated circuit fabrication, reliance on extreme ultraviolet lithography (EUVL) has increased. Additionally, it has become clear that new techniques and methods are needed to mitigate pattern defectivity and roughness at lithography and etch process and eliminate film-related defects. These approaches require improvements to the process chemicals and the lithography process equipment to achieve finer patterns. ESPERTTM (Enhanced Sensitivity develoPER TechnologyTM) technique has been developed and optimized to fulfil this novel development need. ESPERTTM has demonstrated a capability that can enhance the developing contrast between the EUV exposed and unexposed areas. This paper reviews 23 nm pitch line and space and sub-40 nm pitch pillars which were realized by optimized illuminators with 0.33 NA single exposure, and we will show how ESPERTTM helped improve the minimum critical dimension size, defectivity, roughness and electrical yield at the finer patterns.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Kanzo Kato, Lior Huli, Steven Grzeskowiak, Alexandra Krawicz, Eric Liu, Akiteru Ko, Satoru Shimura, Shinichiro Kawakami, Cong Q. Dinh, Takahiro Kitano, Seiji Nagahara, Luciana Meli, Indira Seshadri, Martin Burkhardt, and Karen Petrillo "Coater/developer-based patterning techniques to improve tight pitches towards high-NA EUV", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530Y (10 April 2024); https://doi.org/10.1117/12.3010880

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