Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

Rania Gamal; Sarah Shafaay; Yehea Ismail; Mohamed A. Swillam

doi:10.1117/1.JNP.11.016006

7 February 2017 Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

Rania Gamal, Sarah Shafaay, Yehea Ismail, Mohamed A. Swillam

Author Affiliations +

Journal of Nanophotonics, Vol. 11, Issue 1, 016006 (February 2017). https://doi.org/10.1117/1.JNP.11.016006

Abstract

We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material’s dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

Citation Download Citation

Rania Gamal, Sarah Shafaay, Yehea Ismail, and Mohamed A. Swillam "Silicon plasmonics at midinfrared using silicon-insulator-silicon platform," Journal of Nanophotonics 11(1), 016006 (7 February 2017). https://doi.org/10.1117/1.JNP.11.016006

Received: 7 August 2016; Accepted: 12 January 2017; Published: 7 February 2017

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