2 February 2016 Simulating semiconductor structures for next-generation optical inspection technologies
Ori Golani, Ido Dolev, James Pond, Jens Niegemann
Author Affiliations +
Abstract
We present a technique for optimizing advanced optical imaging methods for nanoscale structures, such as those encountered in the inspection of cutting-edge semiconductor devices. The optimization flow is divided to two parts: simulating light-structure interaction using the finite-difference time-domain (FDTD) method and simulating the optical imaging system by means of its optical transfer function. As a case study, FDTD is used to simulate 10-nm silicon line-space and static random-access memory patterns, with irregular structural protrusions and silicon-oxide particles as defects of interest. An ultraviolet scanning-spot optical microscope is used to detect these defects, and the optimization flow is used to find the optimal imaging mode for detection.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2016/$25.00 © 2016 SPIE
Ori Golani, Ido Dolev, James Pond, and Jens Niegemann "Simulating semiconductor structures for next-generation optical inspection technologies," Optical Engineering 55(2), 025102 (2 February 2016). https://doi.org/10.1117/1.OE.55.2.025102
Published: 2 February 2016
Lens.org Logo
CITATIONS
Cited by 7 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Particles

Finite-difference time-domain method

Semiconductors

Scattering

Signal to noise ratio

Optical inspection

Light scattering

Back to Top