Mr. Abhishek Vaidya Profile

Abhishek Vaidya

at Univ at Buffalo

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Proceedings Article | 12 April 2021 Presentation

Gallium oxide based power and RF device technologies

Uttam Singisetti, Shivam Sharma, Ke Zeng, Abhishek Vaidya, Sudipto Saha, Avinash Kumar, Ankit Sharma

Proceedings Volume 11742, 117420V (2021) https://doi.org/10.1117/12.2587885

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Beta-Ga₂O₃ has emerged as a promising ultra-wide-bandgap semiconductor system for next generation power, and RF applications. In this talk, we will present our recent results on gallium oxide based high breakdown voltage MOSFETs and scaled gate length RF devices. The large bandgap of Ga₂O₃ leads to a high critical field strength. This high field strength in combination with high room temperature mobility and calculated electron velocity leads to a higher Baliga’s Figure of Merit (BFoM) and Johnston Figure of Merit (JFoM) than commercial widebandgap technologies. Additionally, the large bandgap also enables high temperature operation and radiation hardness making it attractive for harsh environment applications. We will present our work on the lateral MOSFETs with improved field plate design which show record high breakdown voltages. DC and pulsed I-V characteristics of 100 nm gate length Ga₂O₃ MOSFET will be reported. DC-RF dispersion and passivation technology will be discussed.

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