Dr. Alessandro Caria Profile

Dr. Alessandro Caria

at Univ degli Studi di Padova

SPIE Involvement:

Author

Profile Summary

Alessandro Caria was born in Italy in 1991. He received his Master’s Degree in Physics from the University of Padova in September 2017 and his Ph.D. in Information and Communication Science and Technology from University of Padova in February 2021 with a thesis on the physical phenomena limiting efficiency and reliability of InGaN-GaN multiple quantum well photodetectors and LEDs. He is currently a post-doc researcher at University of Padova, working on physics and reliability of III-nitride based photodetectors and optoelectronic devices.

Publications (17)

Proceedings Article | 13 March 2024 Paper

Paper

Robustness and reliability of high-power white LEDs under high-temperature, high-current stress

A. Caria, R. Fraccaroli, G. Pierobon, T. Castellaro, G. Mura, P. Ricci, C. De Santi, M. Buffolo, N. Trivellin, E. Zanoni, G. Meneghesso, M. Meneghini

Proceedings Volume 12906, 129060T (2024) https://doi.org/10.1117/12.3005352

KEYWORDS: Light emitting diodes, Reliability, Raman spectroscopy, Light sources and illumination, Failure analysis, Solid state lighting

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Proceedings Article | 13 March 2024 Paper

Paper

Undestanding commercial UVC LEDs reliability to boost disinfection efficacy

Nicola Trivellin, Francesco Piva, Carlo De Santi, Alessandro Caria, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 12906, 129060E (2024) https://doi.org/10.1117/12.3002252

KEYWORDS: Light emitting diodes, Reliability, Emission wavelengths, Design, Ultraviolet light emitting diodes, Statistical analysis, Neodymium, Mercury, Engineering, Accelerated life testing

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Proceedings Article | 8 March 2024 Presentation + Paper

Presentation + Paper

Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs

Marco Nicoletto, Alessandro Caria, Fabiana Rampazzo, Carlo De Santi, Matteo Buffolo, Giovanna Mura, Francesca Rossi, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 12886, 128860C (2024) https://doi.org/10.1117/12.3004922

KEYWORDS: Simulations, Scanning electron microscopy, Magnesium, Silicon, Quantum wells, Indium gallium nitride, Solar cells, Transmission electron microscopy, Gallium nitride, Quantum devices

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Proceedings Article | 8 March 2024 Presentation + Paper

Presentation + Paper

Antimony selenide solar cells: non-ideal deep level response and study of trap-filling transients

C. De Santi, J. J. Barrantes, F. Piva, A. Caria, M. Buffolo, N. Trivellin, S. Rampino, G. Spaggiari, R. Jakomin, F. Pattini, G. Meneghesso, E. Zanoni, M. Meneghini

Proceedings Volume 12881, 1288104 (2024) https://doi.org/10.1117/12.3002199

KEYWORDS: Capacitance, Solar cells, Activation energy

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Proceedings Article | 8 March 2024 Presentation + Paper

Presentation + Paper

Semitransparent perovskite solar cells for Si tandem and agrivoltaic integration

Nicola Trivellin, Noah Tormena, Jessica Jazmine Nicole Barrantes, Carlo De Santi, Francesco Piva, Alessandro Caria, Matteo Buffolo, Andrea Cester, Fabio Matteocci, Aldo Di Carlo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 12881, 1288107 (2024) https://doi.org/10.1117/12.3001797

KEYWORDS: External quantum efficiency, Doping, Perovskite, Solar cells, Silicon, Reflectivity, Absorption, Quantum measurement, Resistance, Optical transmission

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Proceedings Article | 16 March 2023 Presentation + Paper

Presentation + Paper

Dynamical properties and performances of ß-Ga2O3 UVC photodetectors of extreme solar blindness

Luc Damé, Lucile Conan, Carlo De Santi, Alessandro Caria, Matteo Buffolo, Matteo Meneghini, Pierre Maso, Clément Dias, Halima Ghorbel, Mustapha Meftah, Philippe Bove, V. Sandana, David Rogers, Ferechteh Teherani

Proceedings Volume 12422, 1242207 (2023) https://doi.org/10.1117/12.2651204

KEYWORDS: Spectral response, Photodetectors, Dark current, Packaging, Gallium oxide, Epitaxy, Vacuum, Oxides, Optical lithography, Gallium

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Proceedings Article | 15 March 2023 Presentation + Paper

Presentation + Paper

Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress

Alessandro Caria, Carlo De Santi, Marco Nicoletto, Matteo Buffolo, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 12421, 124210D (2023) https://doi.org/10.1117/12.2653129

KEYWORDS: Solar cells, Quantum experiments, Photovoltaics, External quantum efficiency, Gallium nitride, Quantum wells, Solar energy

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Proceedings Article | 15 March 2023 Presentation + Paper

Presentation + Paper

Degradation of GaN-based InGaN-GaN MQWs solar cells caused by thermally-activated diffusion

Marco Nicoletto, Alessandro Caria, Carlo De Santi, Matteo Buffolo, Xuanqui Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 12421, 1242106 (2023) https://doi.org/10.1117/12.2653110

KEYWORDS: Diffusion, Solar cells, Quantum processes, Hydrogen, Gallium nitride, Quantum wells, Magnesium, Electroluminescence, Quantum experiments, Quantum devices

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Proceedings Article | 14 March 2023 Presentation + Paper

Presentation + Paper

Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study

C. Casu, M. Buffolo, A. Caria, C. De Santi, E. Zanoni, G. Meneghesso, M. Meneghini

Proceedings Volume 12441, 124410E (2023) https://doi.org/10.1117/12.2651787

KEYWORDS: Quantum wells, Light emitting diodes, Quantum processes, Quantum regime, Indium gallium nitride, Emission wavelengths, Electroluminescence, Electrons, Quantum devices, Quantum efficiency

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Proceedings Article | 5 March 2022 Presentation + Paper

Presentation + Paper

GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress

Alessandro Caria, Carlo De Santi, Marco Nicoletto, Matteo Buffolo, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 12001, 1200107 (2022) https://doi.org/10.1117/12.2608680

KEYWORDS: Solar cells, Luminescence, External quantum efficiency, Quantum wells, Solar energy, Quantum efficiency, Reliability

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Proceedings Article | 4 March 2022 Presentation + Paper

Presentation + Paper

Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes

C. Casu, M. Buffolo, A. Caria, C. De Santi, E. Zanoni, G. Meneghesso, M. Meneghini

Proceedings Volume 12022, 120220H (2022) https://doi.org/10.1117/12.2606843

KEYWORDS: Quantum wells, Light emitting diodes, Indium, Gallium nitride, Electroluminescence, Active optics, Diffusion, Reliability, Indium gallium nitride

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Proceedings Article | 5 March 2021 Presentation + Paper

Presentation + Paper

How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile

F. Piva, C. De Santi, A. Caria, M. Buffolo, C. Haller, J.-F. Carlin, M. Mosca, G. Meneghesso, E. Zanoni, N. Grandjean, M. Meneghini

Proceedings Volume 11686, 116861X (2021) https://doi.org/10.1117/12.2578123

KEYWORDS: Quantum wells, Light emitting diodes, Indium gallium nitride, Quantum efficiency, Instrument modeling, Capacitance, Active optics

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Proceedings Article | 5 March 2021 Presentation + Paper

Presentation + Paper

Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements

C. De Santi, E. Fabris, A. Caria, M. Buffolo, W. Li, K. Nomoto, Z. Hu, D. Jena, H. Xing, G. Meneghesso, E. Zanoni, M. Meneghini

Proceedings Volume 11687, 116870E (2021) https://doi.org/10.1117/12.2579478

KEYWORDS: Fin field effect transistors, Oxides, Optical testing, Semiconductors, Electrons, Data modeling, Ultraviolet radiation, Metals, Interfaces

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Proceedings Article | 25 February 2020 Paper

Paper

Dependence of degradation on InGaN quantum well position: a study based on color coded structures

Alessandro Caria, Nicola Renso, Carlo De Santi, Francesco Dalla Torre, Lorenzo Zecchin, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 11302, 113020X (2020) https://doi.org/10.1117/12.2547251

KEYWORDS: Quantum wells, Indium gallium nitride, Light emitting diodes, Gallium nitride

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Proceedings Article | 16 February 2020 Paper

Paper

Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition

Alessandro Caria, Carlo De Santi, Filippo Zamperetti, Xuanqi Huang, Houqiang Fu, Hong Chen, Yuji Zhao, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings Volume 11280, 112800E (2020) https://doi.org/10.1117/12.2547590

KEYWORDS: External quantum efficiency, Quantum efficiency, Solar cells, Quantum wells, Reliability, Wafer-level optics, Resistance, Gallium nitride, Silicon

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Proceedings Article | 1 March 2019 Presentation + Paper

Presentation + Paper

Challenges for highly reliable GaN-based LEDs

Enrico Zanoni, Carlo De Santi, Nicola Trivellin, Nicola Renso, Matteo Buffolo, Desiree Monti, Alessandro Caria, Francesco Piva, Gaudenzio Meneghesso, Matteo Meneghini

Proceedings Volume 10940, 109400I (2019) https://doi.org/10.1117/12.2507533

KEYWORDS: Light emitting diodes, Diffusion, Reliability, Hydrogen, Semiconductor lasers, Photons, Optoelectronic devices, Thermography, Luminescence, Metals

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Proceedings Article | 23 February 2018 Paper

Paper

Degradation processes and origin in InGaN-based high-power photodetectors

Carlo De Santi, M. Meneghini, A. Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, E. Zanoni, G. Meneghesso

Proceedings Volume 10532, 105321J (2018) https://doi.org/10.1117/12.2289466

KEYWORDS: External quantum efficiency, Gallium, Photodetectors, Solar cells, Quantum wells, Reliability, Gallium nitride, Indium gallium nitride, Photovoltaics

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Showing 5 of 17 publications

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