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Dr. Amber McCreary
at National Institute of Standards and Technology
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Publications (1)
Proceedings Article | 21 August 2020 Presentation
Electrical transport properties of n- and p- doped InSe: Bulk crystals versus exfoliated layers
Zheng Sun, Sergiy Krylyuk, Jinshui Miao, Edwin J. Heilweil, Timothy J. Magnanelli, Amber McCreary, Angela Hight Walker, Patrick Vora, Deep Jarivala, Mona Zaghloul, Albert Davydov
Proceedings Volume 11465, 114650C (2020) https://doi.org/10.1117/12.2567242
KEYWORDS: Crystals, Photonic crystals, Doping, Field effect transistors, Thin films, N-type semiconductors, Semiconductors, Tin, Zinc, Thin film devices
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