This work investigates the ability to integrate conductive polymer compounds as self-supporting sensitive layers in
microbolometers. The polymer matrix is a photoresist that can be structured by UV-lithography and hardened to a highly
cross-linked phenolic resin by thermal curing. The electrically conductive filler material is tellurium being synthesized as
(nano)rods with an average diameter of 250 nm and an average length of 5 μm. To fabricate microbolometers pixel
elements an appropriate technology was developed with the motivation to use cost-efficient polymeric materials and
processing steps. It includes a sacrificial layer technique and a dielectrophoretic alignment procedure of the tellurium
nanorods. The resulting electrical conducting network in the polymer matrix has a temperature coefficient of resistance
(TCR) of -1.4 % / K that yield the bolometric effect. The TCR-value and the resistance are determined by the intrinsic
properties of the tellurium nanorods and the characteristics of the hopping conduction occurring between neighboring
tellurium nanorods. The electrical properties can be tailored by the alignment procedure to some extent. However, there
is an interrelation between a high TCR and a high resistance.
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