In this paper we present the developments carried out at III-V lab in collaboration with CEA-Leti on the hybrid integration of III-V chips with ultra-low-loss silicon nitride circuits for optical detection and RF systems. Different types of hybrid circuits will be presented: 1- a narrow linewidth laser based on the combination of an InP R-SOA and a long Bragg grating on SiN, 2- a Kerr frequency comb based on a high-power InP DFB laser butt-coupled to a high-Q SiN micro-ring, 3- a long cavity mode-locked laser based on an R-SOA and a SiN circuit with a delay line and a Bragg grating.
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