Dr. Boleslaw Lucznik Profile

Dr. Boleslaw Lucznik

at Institute of High Pressure Physics

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Author

Publications (15)

Proceedings Article | 5 March 2022 Presentation

Carbon and manganese in semi-insulating bulk GaN crystals

Mikolaj Amilusik, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Somakumar, Andrzej Suchocki, Michal Bockowski

Proceedings Volume PC12001, PC1200102 (2022) https://doi.org/10.1117/12.2607476

KEYWORDS: Crystals, Manganese, Carbon, Gallium nitride, Remote sensing, X-ray diffraction, Vapor phase epitaxy, Silicon, Raman spectroscopy, Oxygen

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Proceedings Article | 5 March 2021 Presentation

Recent progress in basic ammonothermal GaN crystal growth

Karolina Grabianska, Michal Bockowski, Boleslaw Lucznik, Robert Kucharski, Tomasz Sochacki

Proceedings Volume 11686, 116861K (2021) https://doi.org/10.1117/12.2577016

KEYWORDS: Gallium nitride, Crystals, Transistors, Vapor phase epitaxy, Sodium, Semiconductor lasers, Optoelectronic devices, High power lasers, Electronic components

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Proceedings Article | 10 March 2020 Presentation

Recent progress in bulk GaN growth (Conference Presentation)

Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, Tomasz Sochacki

Proceedings Volume 11280, 1128004 (2020) https://doi.org/10.1117/12.2545062

KEYWORDS: Gallium nitride, Crystals, Doping, Manganese, Vapor phase epitaxy

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Proceedings Article | 13 March 2019 Presentation

Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)

Michal Bockowski, Izabella Grzegory, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Mikolaj Amilusik, Malgorzata Iwinska, Aneta Sidor, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Marcin Zajac

Proceedings Volume 10918, 1091804 (2019) https://doi.org/10.1117/12.2508154

KEYWORDS: Manganese, Iron, Magnesium, Gallium nitride, Doping, Crystals, Solids, Methane, Carbon, Temperature metrology

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Proceedings Article | 13 March 2019 Presentation

Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy (Conference Presentation)

Michal Bockowski, Michal Fijalkowski, Tomasz Sochacki, Mikolaj Amilusik, Boleslaw Lucznik, Malgorzata Iwinska, Aneta Sidor, Grzegorz Kamler, Marek Oklej, Rafal Jakiela, Adam Barcz

Proceedings Volume 10918, 1091805 (2019) https://doi.org/10.1117/12.2507526

KEYWORDS: Gallium nitride, Crystals, Beryllium, Vapor phase epitaxy, Ion implantation, Electronic components, Transistors, Annealing, Nitrogen

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Proceedings Article | 14 March 2018 Presentation

Crystallization of AlGaN by HVPE method (Conference Presentation)

Michal Bockowski, Malgorzata Iwinska, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, Boleslaw Lucznik

Proceedings Volume 10532, 1053206 (2018) https://doi.org/10.1117/12.2289135

KEYWORDS: Aluminum, Crystals, Epitaxy, Gallium, Nanostructures

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Proceedings Article | 14 March 2018 Presentation

Crystallization of HVPE-GaN:Mn with metallic Mn as dopant source (Conference Presentation)

Michal Bockowski, Malgorzata Iwinska, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, Boleslaw Lucznik

Proceedings Volume 10532, 1053205 (2018) https://doi.org/10.1117/12.2289126

KEYWORDS: Manganese, Crystals, Gallium nitride, Doping, Temperature metrology, Gallium

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Proceedings Article | 26 February 2016 Paper

HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut

Malgorzata Iwinska, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Boleslaw Lucznik, Ewa Grzanka, Elzbieta Litwin-Staszewska, Anna Nowakowska-Siwinska, Izabella Grzegory, Eric Guiot, Raphael Caulmilone, Martin Seiss, Tobias Mrotzek, Michal Bockowski

Proceedings Volume 9748, 974809 (2016) https://doi.org/10.1117/12.2208854

KEYWORDS: Gallium nitride, Silicon, Semiconducting wafers, Crystals, Sapphire, Etching, Raman spectroscopy, Molybdenum, Reflection, Photomasks

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Proceedings Article | 13 March 2015 Paper

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

M. Amilusik, T. Sochacki, B. Lucznik, M. Fijalkowski, M. Iwinska, J. Weyher, E. Grzanka, P. Krupczynska, A. Khachapuridze, I. Grzegory, M. Bockowski

Proceedings Volume 9363, 93630F (2015) https://doi.org/10.1117/12.2077929

KEYWORDS: Crystals, Gallium nitride, Hydrogen, Nitrogen, Gases, Raman spectroscopy, Oxygen, Silicon, Quartz, Interfaces

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Proceedings Article | 4 March 2013 Paper

HVPE-GaN growth on ammonothermal GaN crystals

Tomasz Sochacki, Mikolaj Amilusik, Boleslaw Lucznik, Michal Boćkowski, Janusz Weyher, Grzegorz Nowak, Bogdan Sadovyi, Grzegorz Kamler, Izabella Grzegory, Robert Kucharski, Marcin Zajac, Robert Doradzinski, Robert Dwilinski

Proceedings Volume 8625, 86250B (2013) https://doi.org/10.1117/12.2003699

KEYWORDS: Crystals, Gallium nitride, Annealing, Surface finishing, Polishing, Interfaces, Gallium, Etching, X-rays, Quartz

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Proceedings Article | 4 March 2013 Paper

Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration

Michal Boćkowski, Boleslaw Lucznik, Tomasz Sochacki, Mikolaj Amilusik, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Izabella Grzegory

Proceedings Volume 8625, 862509 (2013) https://doi.org/10.1117/12.2002042

KEYWORDS: Crystals, Gallium nitride, Gallium, Nitrogen, Oxygen, Liquids, Indium, Magnesium, Liquid crystals, Polishing

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Proceedings Article | 14 February 2008 Paper

Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6910, 69100G (2008) https://doi.org/10.1117/12.755767

KEYWORDS: Gallium nitride, Crystals, Indium, Indium gallium nitride, Polishing, Semiconducting wafers, Surface finishing, Quantum wells, Manufacturing, Light emitting diodes

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Proceedings Article | 3 March 2006 Paper

Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method

M. Bockowski, I. Grzegory, G. Nowak, G. Kamler, B. Łucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski

Proceedings Volume 6121, 612103 (2006) https://doi.org/10.1117/12.645066

KEYWORDS: Gallium nitride, Crystals, Silicon, Gallium, Molybdenum, Tungsten, Sapphire, Liquids, Scanning electron microscopy, Nitrogen

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Proceedings Article | 3 March 2006 Paper

Growth of bulk GaN by HVPE on pressure grown seeds

I. Grzegory, B. Łucznik, M. Boćkowski, B. Pastuszka, M. Kryśko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6121, 612107 (2006) https://doi.org/10.1117/12.645976

KEYWORDS: Crystals, Gallium nitride, Etching, Polishing, Surface finishing, Reflection, Reactive ion etching, Electrochemical etching, X-rays, Crystallography

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Proceedings Article | 28 August 2002 Paper

Optoelectronic devices built on bulk GaN substrates

P. Perlin, I. Grzegory, M. Leszczynski, P. Prystawko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, M. Bockowski, B. Lucznik, G. Franssen, S. Porowski

Proceedings Volume 10303, 1030306 (2002) https://doi.org/10.1117/12.482622

KEYWORDS: Optoelectronic devices, Gallium nitride, Light emitting diodes, Semiconductor lasers, Crystals, Homoepitaxy, Optical properties, High power lasers, Diodes

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Showing 5 of 15 publications

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