One of the most crucial tasks for under 90nm IC is the small contact holes. Traditional model-based OPC is not effective and
doesn't cover the process window regarding side-lobe at all. Although there are some novel approaches which have shown good
performances, most of them focus on single size contact hole. Actually, there are much more challenges and difficulties to be
implanted them on random size contact holes which have various hole sizes in such high 2-D MEEF condition. In consideration of
manufacturability, the combination of off-axis, high NA and sub resolution assist features (SRAFs) is still the better candidate to
improve process window of contact hole at 65nm generation. But, even that, the implementation of OPC of this combination still
needs new concepts and methodologies involved. The reason is that both of random sizes and arbitrary locations really create a lot of
difficulties coming from the conflictive placement of SRAFs and side-lobe for various hole sizes and pitches. Moreover, process
window of various pitches are strongly affected by SRAFs rules and side-lobe. Therefore, in order to build a more complete OPC
model, the OPC model needs special treatment and procedure together with the consideration of design rule and hybrid OPC
handling. This study will depict the whole concept and design avoiding the blocks of model-based OPC treatment and build a
working flow for OPC SRAF adding.
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