Dr. Dan Buca Profile

Dr. Dan Buca

at Forschungszentrum Juelich GmbH

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 13 March 2023 Presentation

GeSnOI technology enabling room temperature lasing with GeSn alloys

Moustafa El Kurdi, Andjelika Bjelajac, Maksym Gromovyi, Emilie Sakat, Zoran Ikonic, Vincent Reboud, Alexei Chelnokov, Nicolas Pauc, Vincent Calvo, Jean-Michel Hartmann, Dan Buca

Proceedings Volume PC12426, PC1242606 (2023) https://doi.org/10.1117/12.2646181

KEYWORDS: Semiconductors, Semiconductor lasers, Resonators, Manufacturing, Laser resonators, Laser development

Read Abstract +

Proceedings Article | 5 March 2022 Open Access

Modeling and design of an electrically pumped SiGeSn microring laser

B. Marzban, L. Seidel, V. Kiyek, T. Liu, M. Zöllner, Z. Ikonic, G. Capellini, D. Buca, J. Schulze, M. Oehme, J. Witzens

Proceedings Volume 12006, 120060K (2022) https://doi.org/10.1117/12.2609537

KEYWORDS: Microrings, Electroluminescence, Absorption, Scanning electron microscopy, Resistance, Germanium, Diodes, Semiconductors, Semiconductor lasers

Read Abstract +

DOWNLOAD PAPER

Proceedings Article | 5 March 2021 Presentation

GeSnOI technology for enhanced Si-based laser designs and performances

Moustafa El Kurdi, Anas Elbaz, Nils von den Driesch, Binbin Wang, Emilie Sakat, Etienne Herth, Gilles Patriarche, Konstantinos Pantzas, Isabelle Sagnes, Xavier Checoury, Jérémie Chrétien, Nicolas Pauc, Vincent Calvo, Frédéric Boeuf, Philippe Boucaud, Alexei Chelnokov, Vincent Reboud, Detlev Grützmacher, Dan Buca, Jean-Michel Hartmann

Proceedings Volume 11705, 117050I (2021) https://doi.org/10.1117/12.2587318

KEYWORDS: Laser development, Silicon, Germanium, Interfaces

Read Abstract +

Proceedings Article | 4 March 2019 Presentation

Strain engineering in SiGeSn/GeSn heterostructures for light emitters (Conference Presentation)

Dan Buca, Detlev Gruetzmacher, Moustafa El Kurdi, Daniela Stange, Zoran Ikonic, Nils von den Driesch, Denis Rainko, Hans Sigg, Jean-Michel Hartmann

Proceedings Volume 10923, 109230X (2019) https://doi.org/10.1117/12.2511367

KEYWORDS: Tin, Heterojunctions, Silicon, Light sources, Germanium, Group IV semiconductors, Semiconductors, Interfaces, Laser damage threshold, Quantum wells

Read Abstract +

Proceedings Article | 13 May 2016 Paper

(Si)GeSn nanostructures for light emitters

D. Rainko, D. Stange, N. von den Driesch, C. Schulte-Braucks, G. Mussler, Z. Ikonic, J. M. Hartmann, M. Luysberg, S. Mantl, D. Grützmacher, D. Buca

Proceedings Volume 9891, 98910W (2016) https://doi.org/10.1117/12.2227573

KEYWORDS: Photonics, Heterojunctions, Silicon, Tin, Light emitting diodes, Electrons, Photonic integrated circuits, Electronic circuits, Crystals, Photonic crystals, Quantum wells, Optoelectronics, Germanium, Annealing, Quantum dots, Transmission electron microscopy, Electroluminescence

Read Abstract +

Proceedings Article | 14 March 2016 Paper

Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si

Nils von den Driesch, Daniela Stange, Stephan Wirths, Denis Rainko, Gregor Mussler, Toma Stoica, Zoran Ikonic, Jean-Michel Hartmann, Detlev Grützmacher, Siegfried Mantl, Dan Buca

Proceedings Volume 9752, 97520C (2016) https://doi.org/10.1117/12.2211641

KEYWORDS: Group IV semiconductors, Electroluminescence, Germanium, Heterojunctions, Temperature metrology, Crystals

Read Abstract +

Proceedings Article | 1 May 2015 Open Access

Epitaxially grown vertical junction phase shifters for improved modulation efficiency in silicon depletion-type modulators

S. Sharif Azadeh, S. Romero-García, F. Merget, A. Moscoso-Mártir, Nils von den Driesch, D. Buca, J. Witzens

Proceedings Volume 9516, 95160T (2015) https://doi.org/10.1117/12.2178790

KEYWORDS: Silicon, Modulators, Phase shift keying, Doping, Waveguides, Phase shifts, Modulation, Absorption, Capacitance, Resistance

Read Abstract +

High-speed silicon modulators based on the plasma effect in reverse-biased p(i)n junction phase shifters have been extensively investigated. The main challenge for such modulators is to maximize their modulation efficiency without compromising high-speed performance and insertion losses. Here, we propose a highly efficient silicon modulator based on a Mach-Zehnder Interferometer in which the doping profile of a vertical pin junction is precisely controlled by means of in-situ doping during silicon epitaxial growth. The precise level of control afforded by this fabrication procedure allows separately optimizing doping concentrations in the immediate vicinity of the junction and in surrounding electrical transport layers at the nanometric scale, enabling high performance levels. Free carrier absorption losses are minimized by implementing high carrier densities only in the waveguide regions where they benefit the most, i.e., in the immediate vicinity of the junction. Since these devices rely entirely on single crystal silicon, performance degradation caused by poor transport and high optical losses in poly- or amorphous silicon (as utilized in similar vertical phase shifter geometries such as semiconductor-insulator-semiconductor capacitive phase shifters) is avoided. Furthermore, unlike conventional plasma effect silicon phase shifters, the bandwidth of the proposed phase shifters is largely independent of the applied reverse voltage and the phase shift versus applied voltage is linearized, making them more suitable for complex modulation formats. The efficiency of the single ended phase shifters is expected to reach a VπL of 0.56 V•cm and absorption losses of α=4.5 dB/mm, a good performance metric for depletion-type modulators. Lumped element Mach-Zehnder Modulators as well as travelling-wave modulators with phase matching based on meandered waveguides have been designed and their RF characteristics simulated and optimized with Ansoft HFSS. First experiments have validated the growth of the epitaxial stack and complete devices are currently being fabricated.

DOWNLOAD PAPER

Proceedings Article | 23 February 2000 Paper

Selective laser sintering processing of metallic components by using a Nd:YAG laser beam

Florenta Costache, A. Marian, Dan Buca, Valentin Iov

Proceedings Volume 4068, (2000) https://doi.org/10.1117/12.378724

Read Abstract +

Proceedings Article | 23 February 2000 Paper

Peculiarities of the solidification mechanism of steel after Nd:YAG long-pulse laser welding

Valentin Iov, Florenta Costache, A. Marian, Dan Buca

Proceedings Volume 4068, (2000) https://doi.org/10.1117/12.378723

Read Abstract +

Proceedings Article | 2 July 1998 Paper

Compacting of metallic powder by using Nd:YAG laser

A. Marian, Dan Buca, Traian Dascalu, Marian Poterasu

Proceedings Volume 3405, (1998) https://doi.org/10.1117/12.312763

KEYWORDS: Nd:YAG lasers, Q switched lasers, Q switching, Laser sintering, Particles, Continuous wave operation, 3D modeling, Iron, Gold

Read Abstract +

Proceedings Article | 2 July 1998 Paper

Nd:YAG laser surface texturing

Marian Poterasu, Traian Dascalu, A. Marian, Dan Buca

Proceedings Volume 3405, (1998) https://doi.org/10.1117/12.312757

KEYWORDS: Pulsed laser operation, Nd:YAG lasers, Q switched lasers, Laser ablation, Absorption, Aluminum, Ceramics, Mathematical modeling, Laser damage threshold, Plasma

Read Abstract +

Showing 5 of 11 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years