Mr. Daniel Courboin Profile

Daniel Courboin

Engineering leader at Toppan Photomasks Korea Ltd

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Publications (6)

Proceedings Article | 2 April 2011 Paper

DOE experiment for scattering bars optimization at the 90nm node

G. Bouton, B. Connolly, D. Courboin, A. Di Giacomo, F. Gasnier, R. Lallement, D. Parker, M. Pindo, J. C. Richoilley, F. Royere, A. Rameau-Savio, M. Tissier

Proceedings Volume 7985, 79850R (2011) https://doi.org/10.1117/12.896341

KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Diffractive optical elements, Optical proximity correction, Scattering, Scanning electron microscopy, Semiconducting wafers, Lithography, Manufacturing

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Scattering bars (SB) are sub-resolution lines added to the original database during Resolution Enhancement Techniques (RET) treatments. Their goal is stabilizing the CD of the adjacent polygons (by suppressing or reducing secondary diffraction waves). SB increase the process window in the litho process by lowering the first derivative of the CD. Moreover, the detailed knowledge of SB behavior around the fab working point is a must for future shrinks and for preparing the next technology nodes. SB are inserted in the generation of critical levels for STMicroelectronics 90 nm technology embedded memories before invoking the Model for Optical Proximity Corrections (MBOPC). This allows the software to calculate their contribution to the intensity in the aerial image and integrate their effects in Edge Proximity Error (EPE) corrections. However the Rule-Based insertion of these assist features still leaves behind occurrences of conflicting priorities as in the image below. (See manuscript PDF)Detection of Hot Spots in 2D simulations for die treatment validation (done on BRION equipment on each critical level before mask making) is in most cases correlated with SB singularities, at least for CD non-uniformity, bridging issues and necking in correspondence with OPC fragmentation effects. Within the framework of the MaXSSIMM project, we established a joint STMicroelectronics and Toppan Photomasks team to explore the influence of assist features (CD, distance), convex and concave corner rounding and CD uniformity by means of specific test patterns. The proposed study concerns the algorithms used to define the mask shop input as well as the physical mask etching. A set of test cases, based on elementary test patterns, each one including a list of geometrical variations, has been defined. As the number of configurations becomes rapidly very large (tens of thousands) we had to apply Design of Experiments (DOE) algorithms in order to reduce the number of measurements to a reasonable range (a few hundred). The proposed test cells have been inserted in the scribe lanes of an engineering Gate mask of one of STMicroelectronics' high volume products. Real Hot Spots, detected in the product chosen as the test vehicle, have also been submitted to the same variations and inserted in scribe blocks. In parallel with OPC-like scribe layouts, four best-guess treatments were applied, on the same critical mask, to assess transistor performance and yield impact by standard wafer splitting on engineering lots. The advanced binary 4×6" reticle for 193nm exposure has been manufactured by Toppan Photomasks in the AMTC facility in Dresden using the standard production process on the NuFlare5000 e-beam writing platform. The exploration of the parameter space around the current working point will determine if the current process settings already represent an optimum or if there is room for significant improvement of the wafer manufacturing process.

Proceedings Article | 6 December 2004 Paper

High flow rate development: process optimization using megasonic immersion development (MID)

Daniel Courboin, Jong Woo Choi, Sang Hyun Jung, Seung Hee Baek, Lee Ju Kim

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569774

KEYWORDS: Etching, Photomasks, Critical dimension metrology, Picture Archiving and Communication System, Photoresist processing, Lithography, Scanning electron microscopy, Standards development, Semiconducting wafers, Process control

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Proceedings Article | 20 August 2004 Paper

Investigations on microloading effect: a parallel approach to PGSD (proximity gap suction development)

Daniel Courboin, Jong Woo Choi, S. Jung, Seung Hee Baek, Lee-Ju Kim, Chang Nam Ahn, Hong-Seok Kim

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557708

KEYWORDS: Critical dimension metrology, Standards development, Photomasks, Lithography, Semiconducting wafers, Diffractive optical elements, Photoresist processing, Acoustics, Temperature metrology, Physics

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Proceedings Article | 1 August 2002 Paper

Fogging and pattern loading effect by writing strategy

Junsik Cho, Seung Hee Baek, Kyung-Han Nam, H. J. Cho, Daniel Courboin, Seong-Ho Jeong, In-Soo Lee, Cheol Shin, Hong-Seok Kim

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476943

KEYWORDS: Critical dimension metrology, Dry etching, Etching, Error analysis, Mask making, Photomasks, Optical proximity correction, Modulation, Logic devices, Scanning electron microscopy

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Proceedings Article | 3 February 2000 Paper

Optimization of ZEP7000 writing and development conditions

Daniel Courboin, Philippe Gervot, Chantal Gayou, Patrick Montarou

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377106

KEYWORDS: Critical dimension metrology, Diffractive optical elements, Photomasks, Scanning electron microscopy, Error analysis, Etching, Dry etching, Statistical analysis, Optical lithography, Photoresist processing

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Proceedings Article | 30 December 1999 Paper

Optimization of ZEP 7000 writing and development conditions

Daniel Courboin, Philippe Gervot, Chantal Gayou, Patrick Montarou

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373293

KEYWORDS: Critical dimension metrology, Diffractive optical elements, Photomasks, Scanning electron microscopy, Etching, Error analysis, Optical lithography, Lithography, Photoresist processing, Statistical modeling

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Showing 5 of 6 publications

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