The long-wave InAs/GaSb type II superlattice graded barrier structure was grown by MBE and applied to fabricate the various area diodes. The anodic sulfidization treatment, SiO2 film deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) and ion beam deposition (IBD) were combined into three methods to passivate the diodes. The variation of dark current density and the forming mechanism as related to diode sizes and measurement temperature was characterized and analyzed. The anodic sulfidization and IBD treated diodes show the worst dark current. The two groups of diodes passivated by anodic sulfidization and ICP-CVD obtained the lowest surface leakage current 3.74×10-5 A/cm2 and 5.08×10-5 A/cm2, the maximal surface resistivity 4.48×105 Ω·cm2 and 9.68×105 Ω·cm2 respectively.
In this article, the band structures of InAs/InAsSb superlattices are calculated by sp3s* model, which is based on empirical tight-bonding method (ETBM). First, the band structures of InAs/InAsSb superlattice with varies period are calculated, the calculated bandgap results are consistent with experiment values. The conduction band edge (Ec level) for the two sets of InAs/InAsSb T2SLs are approximately independent of the cutoff wavelength (or band gap), and they are significantly lower than the conduction band edges of InAs/GaSb. The relationship between periodic structure and cutoff wavelength is obtained under the condition of strain balance. Then the holes effective mass at Γ point of mini-band along the growth direction for different structure InAs/InAsSb superlattice are derived. Finally, the composition segregation function is included in our model in order to study the impact of Sb segregation on InAs/InAsSb superlattice. These material parameters obtained from our calculated results can be used in the design of T2SL-based IR detectors.
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