Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies
the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result,
internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper,
the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping
level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.
We have developed a non-contact spectroscopic technique to measure the temperature change of Thulium-doped glasses and crystals with high precision. The approach makes use of temperature-dependent broadening of various peaks in the luminescence spectra. A weak, cw probe laser excites the sample in vacuum. The luminescence spectrum is collected by a fiber and routed to a high-resolution spectrometer. We have demonstrated temperature resolution of 62 mK in Tm:BaY2F8.
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