Prof. Enrique Calleja Pardo Profile

Prof. Enrique Calleja Pardo

Professor at Univ Politécnica de Madrid

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Author

Publications (5)

Proceedings Article | 28 April 2017 Presentation

MBE growth of ordered III-nitride nano/microrods: from classical/quantum light sources to nanotransistors and pseudosubstrates (Conference Presentation)

Enrique Calleja

Proceedings Volume 10114, 101140G (2017) https://doi.org/10.1117/12.2257104

KEYWORDS: Gallium nitride, Nanostructures, Indium gallium nitride, Crystals, Light sources, Molecular beam epitaxy, Nanocrystals, Single photon, Transistors, Nanorods

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Proceedings Article | 13 March 2015 Paper

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Snežana Lazić, Ekaterina Chernysheva, Žarko Gačević, Noemi García-Lepetit, Herko van der Meulen, Marcus Müller, Frank Bertram, Peter Veit, Jürgen Christen, Almudena Torres-Pardo, José González Calbet, Enrique Calleja, José Calleja

Proceedings Volume 9363, 93630U (2015) https://doi.org/10.1117/12.2074898

KEYWORDS: Indium gallium nitride, Single photon, Polarization, Heterojunctions, Excitons, Gallium nitride, Sensors, Nanostructures, Luminescence, Nanowires

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Proceedings Article | 8 February 2015 Paper

Selective area growth of III-nitride nanorods on polar, semi-polar, and non-polar orientations: device applications

S. Albert, A. Bengoechea-Encabo, D. Lopez-Romero, P. de Mierry, J. Zúñiga-Pérez, X. Kong, A. Trampert, M. Sanchez-Garcia, E. Calleja

Proceedings Volume 9370, 937017 (2015) https://doi.org/10.1117/12.2085079

KEYWORDS: Gallium nitride, Indium gallium nitride, Nanostructures, Scanning electron microscopy, Light emitting diodes, Nanolithography, Indium nitride, External quantum efficiency, Crystals, Gallium

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Proceedings Article | 21 May 2002 Paper

Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates

Jose Pau, Elias Munoz Merino, Miguel Sanchez-Garcia, Enrico Calleja

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467653

KEYWORDS: Photodetectors, Photodiodes, Aluminum, Stereolithography, Aluminum nitride, Silicon, Sensors, Ultraviolet radiation, Gallium nitride, Gallium

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Proceedings Article | 7 April 1999 Paper

AlGaN-based photodetectors for solar UV applications

Elias Munoz Merino, E. Monroy, Fernando Calle, Miguel Sanchez, Enrico Calleja, Franck Omnes, Pierre J. Gibart, Francisco Jaque, Inigo Aguirre de Carcer

Proceedings Volume 3629, (1999) https://doi.org/10.1117/12.344557

KEYWORDS: Ultraviolet radiation, Aluminum, Sensors, Photodiodes, Photodetectors, Silicon, Solar radiation, Photoresistors, Gallium nitride, Ultraviolet detectors

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Conference Committee Involvement (2)

Gallium Nitride Materials and Devices XI

15 February 2016 | San Francisco, California, United States

Gallium Nitride Materials and Devices X

9 February 2015 | San Francisco, California, United States

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