Prof. Galina V. Chucheva Profile

Prof. Galina V. Chucheva

at Kotelnikov IRE RAS

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Author

Publications (6)

Proceedings Article | 15 March 2019 Paper

The manifestation of rising of the impurity density of states after the field stress in increasing of the effective electron mobility in the inversion channel at the silicon-oxide contact

Galina Chucheva, Evgeny Goldman, Asaf Nabiev, Valentina Naryshkina

Proceedings Volume 11022, 1102215 (2019) https://doi.org/10.1117/12.2521817

KEYWORDS: Polarization, Ions, Silicon, Oxides, Transistors, Magnetism, Interfaces, Electronics, Sodium, Ionic polarization

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Proceedings Article | 15 March 2019 Paper

Features of the field damage of ultra-thin insulating layers of the silicon oxide

Galina Chucheva, Evgeny Goldman, Yuriy Gulyaev

Proceedings Volume 11022, 1102216 (2019) https://doi.org/10.1117/12.2521814

KEYWORDS: Semiconductors, Silicon, Oxides, Electronics, Dielectrics, Electrodes, Molybdenum, Interfaces, Doping, Chemical species

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Proceedings Article | 15 March 2019 Paper

Electric-field-induced domain switching and pinning state in lead-free ferroelectric BST 80/20 film

Mikhail Afanasiev, Galina Chucheva, Dmitry Kiselev

Proceedings Volume 11022, 110221C (2019) https://doi.org/10.1117/12.2521808

KEYWORDS: Switching, Thin films, Scanning probe microscopy, Silicon, Polarization, Barium, Strontium, Silicon films, Sputter deposition, Dielectric polarization

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Proceedings Article | 29 April 2008 Paper

The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures

G. Chucheva, A. Zhdan

Proceedings Volume 7025, 702515 (2008) https://doi.org/10.1117/12.802478

KEYWORDS: Semiconductors, Oxides, Electronics, Algorithm development, Silicon, Cesium, Doping, Quantum physics, Solids, Dielectrics

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Proceedings Article | 28 May 2004 Paper

The discretization of minority carrier generation kinetics at the semiconductor surface bordering inhomogeneous insulator

Yuri Gulyaev, Alexander Zhdan, E. Goldman, G. Chucheva

Proceedings Volume 5401, (2004) https://doi.org/10.1117/12.558769

KEYWORDS: Semiconductors, Oxides, Silicon, Interfaces, Electrons, Diffusion, Electron holes, Neodymium, Electronics, Sensors

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Proceedings Article | 28 May 2004 Paper

Initiated tunnel current through thin gate oxide generation of minority carriers in Si-MIS-structures

G. Chucheva, A. Dudnikov, E. Goldman, N. Zaitsev, Alexander Zhdan

Proceedings Volume 5401, (2004) https://doi.org/10.1117/12.562734

KEYWORDS: Oxides, Semiconductors, Dielectrics, Ionization, Electrons, Interfaces, Electronics, Silicon, Algorithm development, Picosecond phenomena

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Showing 5 of 6 publications

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