Ohmic contact is an important expression of the energy band change after metal-semiconductor contact. This paper summarizes the prerequisites and methods for achieving ohmic contact in the experimental process. This paper sums up in detail the several important factors affecting the formation of ohmic contact during the experimental process, including annealing temperature and time, epitaxial method, type of semiconductor contact layer and doping concentration, type and thickness of the metal contact layer, and size of the metal/semiconductor contact area, etc. We propose a simple and effective method to find the appropriate annealing temperature and time by determining the under-annealing and over annealing states of ohmic contact during the annealing process through a Ring Transmission Line Model. Through extensive experimental verification, the theoretical reasoning matches well with the experimental results. This has a tremendous role in Improving experimental efficiency.
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