EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices beyond 1X nm half-pitch at present. Many efforts have revealed effective proton sources in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution - line width roughness - sensitivity(RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic ter/tetrapolymers containing novel lactone derivatives - LCHO and LAATB - as model photopolymers and exposed the resist samples based on these polymers to EUV and EB radiation. On the basis of the lithographic performances of these photoresists, we evaluated the characteristics of lactone derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.
EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices beyond 1X nm half-pitch. Many efforts have revealed effective proton sources in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution - line width roughness - sensitivity(RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic terpolymers containing novel hydrophilic derivatives as model photopolymers and exposed the resist samples based on these polymers to EUV and EB radiation. On the basis of the lithographic performances of these resist samples, we evaluated the characteristics of hydrophilic derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.
EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices below 1X nm
half-pitch. Many efforts have revealed that the effective proton generation and the control of the generated acid diffusion
are required to improve the breakthrough of the RLS trade-off. For the development of EUV resists, the novel protecting
derivatives were designed. To clarify the lithographic performance of these derivatives, we synthesized the acrylic
polymers containing these derivatives as model photopolymers and exposed the resist samples based on these polymers
to EUV/EB radiation. On the basis of the lithographic performances of these resist sample, we evaluated the
characteristics of novel protecting derivatives upon exposure to EUV/EB radiation. We discuss the relationship between
the chemical structures of these derivatives and lithographic performance.
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