Lead selenide telluride (PbSeTe) polycrystalline films were prepared by magnetron sputtering technique using ternary target material. The lead selenide telluride films were oxidized and iodized. The film samples were tested by the Rigaku Smartlab (grazing X-ray diffractometer) in Japan. The morphology of PbSeTe films after evaporation was observed by SEM (Geminisem 300). The Raman spectra of Pb Se telluride thin films were measured by a confocal microprobe Raman spectrometer (RENISHAW in Via Raman Microscope) and a He-Ne laser with wavelength of 514.5 nm. The infrared photoelectric characteristics of the detector made of PbSeTe thin film before and after sensitization were tested and analyzed. XRD and EDS results show that the prepared PTE films are homogeneous and compact with small grains, and no particles with clear edge profiles can be observed under scanning electron microscopy. The atomic ratio of Te, Pb and Se tends to be 5:7:7. The photoelectric performance detection results show that the sensitized device has excellent photoelectric performance, the photocurrent and response speed are improved significantly, and the fastest rise time and fall time of 980 nm can reach 38.95 microseconds and 620 microseconds, respectively, and the maximum signal-to-noise ratio is nearly 100 times. Therefore, by adjusting sputtering parameters and post-processing, PbSeTe thin film detectors with good photoelectric properties can be obtained.
Due to the increasing demand for miniaturization and portability, the development of self-powered photodetectors that can work without external power supply has aroused great interest among researchers. As a group-10 layered transitional metal dichalcogenides, PtSe2 exhibits potential applications in photoelectric detection because of the unique properties such as high carrier mobility, tunable bandgap, and stability. However, its inherent large dark current hinders the further improvement of the performance of the PtSe2 photodetectors. In this paper, we fabricated a vertically aligned Two-dimensional (2D) van der Waals (vdWs) heterojunction composed of PtSe2 and MoSe2, which exhibits high sensitivity photoelectric detection performance in a wide band from visible light (405 nm) to near-infrared (1550 nm) without external bias. As a result, working in self-driving mode at room temperature, the responsivity and detectivity can reach 22.95 A W-1 and 9.27×1011 Jones with a fast response speed of 180/48 μs. This work is expected to provide a new idea for broadband, energy-efficient and high-performance miniaturized detectors.
Influenced by the prominent progress of two-dimensional (2D) layered crystals, the fabrication of 2D nanostructures from non-layered materials has attracted more and more attention. Lead selenide (PbSe) is one of the superior candidate materials for photodetector with suitable bandgap and outstanding photoelectric properties. The growth and device preparation of PbSe supply great interest for the development of high-performance infrared photodetectors. Although a lot of efforts have been paid on preparing PbSe nanostructures for miniaturized detectors, it is challenging to synthesize excellent crystallinity and thin 2D PbSe nanosheets because of itsinherent rock salt nonlayered structure. In this work, we employ a catalyst-free facile physical vapor deposition (PVD) method for controllable synthesis of PbSe nanosheets by van der Waals epitaxy technology. By optimizing the growth temperature, PbSe nanosheets from triangular pyramid island to square 2D plane can be obtained. In addition, the 2D PbSe nanosheets detector has a responsivity of 3.03 A/W at the wavelength of 520 nm with the power density of 5.05 mW/cm2. This work provides a facile strategy to synthesize high-quality 2D PbSe nanosheets which have enormous potentials to fabricate high-performance miniaturized photodetector.
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