Mr. Hsin-Han Lai Profile

Hsin-Han Lai

at National Taiwan Univ

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Publications (3)

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Proceedings Article | 1 August 2021 Presentation + Paper

Hot carrier induced photothermal effect on metal-semiconductor Schottky junction

Ruei-Lien Sun, Hsin-Han Lai, Ching-Fuh Lin

Proceedings Volume 11831, 1183104 (2021) https://doi.org/10.1117/12.2593817

KEYWORDS: Sensors, Silicon, Diodes, Signal detection, Interfaces, Photothermal effect, Photons, Light sources, Semiconductors, Mid-IR

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Recent progress in plasmonic absorption devices provides a new way of photon-electron conversion through hot carrier emission if a carrier possesses sufficient energy to overcome the Schottky barrier. However, the behavior of carriers with energy lower than that of the barrier has rarely been discussed, while it could be very useful if the energy is converted efficiently. Very recently, the photothermal effect, which used to be treated as an energy loss, is used to detect low energy photons. Here, we systematically and quantitatively analyzed the mechanism of this effect, which, to the best of our knowledge, has not yet been determined stringently. A very thin layer of Ni is deposited on n-type Si (n-Si) with an electron-beam evaporator, and annealed by rapid thermal processer to form a NiSi/n-Si Schottky junction. The device was measured under intermittent light illumination with several incident power and bias. Under 0.05 V forward bias, the device generates a photothermal assisted response, which is boosted by 23% of the traditional photoelectric response at 1550 nm in 5 s. The response in different incident wavelengths is also presented in this work. The photothermal response is caused by low energy carriers, which dissipates thermally and heats the interface locally, causing the change of the electrical characteristics of the device. This effect could be used to detect signals regardless of wavelength and has a potential in future low energy photon conversion technology.

Proceedings Article | 12 April 2021 Poster + Paper

Silicide-based photodetectors with localized surface plasmon resonance for mid-IR detection

Hong-Jhang Syu, Hsin-Han Lai, Ruei-Lien Sun, Ching-Fuh Lin

Proceedings Volume 11741, 117411S (2021) https://doi.org/10.1117/12.2586050

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Nowadays, infrared (IR) photodetectors are mainly made from compound semiconductors due to the bandgap flexibility. However, compound semiconductors are mostly synthesized by expensive and energy-intensive epitaxy processes. Moreover, compound semiconductors are difficult to integrate with Si-based IC industry. Therefore, we used n-type Si (n-Si) wafers and thin NiSi to combine with localized surface plasmon resonance (LSPR) to form a Schottky IR detector. The incident IR light can induce thermionic effect to generate photocurrent, and the LSPR can enhance the light absorption and improve the photoresponse. The LSPR was created by NiSi covered inverted-pyramid array structures (IPAS) formed on n-Si substrates through photolithography and etching processes. After IPAS were prepared, 10-nm-thick Ni was thermally deposited on the IPAS and then the entire samples were annealed under 500 °C in 5 s to form NiSi/n-Si Schottky junctions. Finally, Ti and Au were thermally deposited successively on the NiSi and the back of n-Si wafers to be electrodes. A planar device was also prepared to be a control part. The photodetection ability of the device was examined by a 4.8-μm IR source with 1.8-mW optical power, which is in the absorption range of carbon monoxide. The IR source was turned on/off for each 15 s. Consequently, the planar NiSi/n-Si Schottky photodetector shows average 9.37-μA current change under 4.8-μm IR source illumination in 15 s. However, if 8-μm-period IPAS was used, the average current change improved to 30.9 μA. The response enhancement is 3.30 times of the planar device.

Proceedings Article | 22 August 2020 Poster + Paper

Responsivity enhancement of metal/semiconductor Schottky IR photodetector through visible light assistance

Hong-Jhang Syu, Zih-Chun Su, Hsin-Han Lai, Ssu-Han Huang, Yu-Chieh Huang, Ching-Fuh Lin

Proceedings Volume 11503, 115030X (2020) https://doi.org/10.1117/12.2568354

KEYWORDS: Mid-IR, Photodetectors, Silver, Thermography, Semiconducting wafers, Electrons, Infrared imaging, Silicon, Visible radiation

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Infrared (IR) photodetector is widespread applied to spectroscopy, biosensing, and image detection. Nowadays, most of IR photodetectors are prepared from compound semiconductors, for example, SiGe, HgCdTe, and InSb. However, most of them are formed through high energy consumption and high expense processes, such as chemical vapor deposition. Also, compound devices are not compatible with Si-based IC manufacturing and very expensive. Therefore, here, we used n-type Si (n-Si) wafers and Ag thin films to form a Schottky IR detector. The detection principle is using IR source to induce thermionic effect on Schottky diode and then the scattering of photoelectrons excited by IR and visible light, respectively, induces current difference. Regarding device preparation, at first, the native oxide on n-Si wafers was removed by buffer HF; then the 10-nm-thick Ag films and 100-nm-thick Ag grid anode were thermally deposited on the n-Si successively. Afterward, Al was thermally deposited on the opposite side of n-Si wafers to be a cathode. The electric property of devices was determined through current-to-time (I-T) measurement with an 80-mW green laser illuminating on the Ag side constantly. A 3.22-μm IR source was illuminated through Ag side but turned on/off for each 5 s. The electric bias is 0 V. Consequently, if no green laser exposing, current increased after IR turned on due to the pure thermionic effect and the responsivity is 1.8 mA/W. While the green laser illuminating constantly, current decreased after IR turned on, and the responsivity increased to -15.7 mA/W.

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