Nanoimprint lithography (NIL) has the advantage of high-throughput, sub-10 nm resolution and low cost [1]. It has been included into 2003 ITRS as the Next Generation Lithography (NGL) for 45 nm node [2]. This paper summarized current status of Nanonex imprint technologies. Nanonex imprint process includes thermal nanoimprint (T-NIL) and photo-curable nanoimprint (P-NIL). Both T-NIL and P-NIL utilized a proprietary air cushion press (ACP), which has the advantage of ultra-uniformity, low lateral stress, less damage to the mold and substrate, and higher alignment accuracy. Nanonex Corporation delivers user-friendly nanoimprint lithography tools and solutions for both experts and non-experts of micro and nanofabrication. Nanoimprint machines, resists, molds and processes have been developed and are available today.
Photo-curable nanoimprint lithography (P-NIL), a low pressure and room temperature process, is developed on Nanonex NX-2000 nanoimprintor. The process is capable of achieving uniform imprinting over large area in less than 60 seconds, which is mainly attributed to the Nanonex patented air cushion press (ACP) technology. Nanostructures such as 200nm pitch grating have been successfully demonstrated on 4-inch wafer level using P-NIL on NX-2000 nanoimprintor.
A new kind of spectral analytical instrument has been developed for measuring pulse time-resolved spectra. In this instrument, a special light beam modulator translates the time-distribution of optical spectra into the space- distribution of light intensity, and then the time-dependent spectra is detected by an ordinary 2D CCD device. The time resolution of 25 microsecond(s) and the wavelength range of 224-824 nm have been attained in the experiment of a Xe flash-lamp emission.
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