Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.
Ionized nitrogen doped Si-C multi-layer thin films used to increase the oxidation resistance of carbon have been obtained by Thermionic Vacuum Arc (TVA) method. The 100 nm thickness carbon thin films were deposed on silicon or glass substrates and then seven N doped Si-C successively layers on carbon were deposed. To characterize the microstructure, tribological and electrical properties of as prepared N-SiC multi-layer films, Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDXS), electrical and tribological techniques were achieved. Samples containing multi-layer N doped Si-C coating on carbon were investigated up to 1000°C. Oxidation protection is based on the reaction between SiC and elemental oxygen, resulting SiO2 and CO2, and also on the reaction involving N, O and Si-C, resulting silicon oxynitride (SiNxOy) with a continuously vary composition, and because nitrogen can acts as a trapping barrier for oxygen. The tribological properties of structures were studied using a tribometer with ball-on-disk configuration from CSM device with sapphire ball. The measurements show that the friction coefficient on the N-SiC is smaller than friction coefficient on uncoated carbon layer. Electrical conductivity at different temperatures was measured in constant current mode. The results confirm the fact that conductivity is greater when nitrogen content is greater. To justify the temperature dependence of conductivity we assume a thermally activated electrical transport mechanism.
Ionized nitrogen doped Si-C thin films at 200°C substrate temperature were obtained by Thermionic Vacuum Arc (TVA) method. To increase the energy of N, C and Si ions, -400V, -600V and -1000V negative bias voltages was applied on the substrate. The 400nm, 600nm and 1000nm N-SiC coatings on glass was deposed. To characterize the structure of as-prepared N-SiC coatings, Transmission Electron Microscopy (TEM), High Resolution Transmission Electron Microscopy (HRTEM), X-Ray and Photoelectron Spectroscopy (XPS) techniques was performed. Electrical conductivity was measured comparing the potential drop on the structure with the potential drop on a series standard resistance in a constant current mode. To justify the dependence of measured electrical conductivity by the temperature, we assume a thermally activated electrical transport mechanism.
Crystalline Si-C thin films were prepared at substrate temperature between 200°C and 1000°C using Thermionic
Vacuum Arc (TVA) method. To increase the acceleration potential drop a negative bias voltage up to -1000V was
applied on the substrate. The 200nm thickness carbon thin films was deposed on glass and Si substrate and then 200-500
nm thickness Si-C layer on carbon thin films was deposed. Transmission Electron Microscopy (TEM), High Resolution
Transmission Electron Microscopy (HRTEM), X-Ray Photoelectron Spectroscopy (XPS), and electrical conductivity
measurement technique characterized the structure and physical characteristics of as-prepared SiC coating.
At a constant acceleration potential drop, the electrical conductivity of the Si-C films deposed on C, increase with
increasing of substrate temperature. On the other part, significant increases in the acceleration potential drop at constant
substrate temperature lead to a variation of the crystallinity and electrical conductivity of the SiC coatings
XPS analysis was performed using a Quantera SXM equipment, with monochromatic AlKα radiation at 1486.6eV.
Electrical conductivity of the Si-C coating on carbon at different temperatures was measured comparing the potential
drop on the sample with the potential drop on a series standard resistance in constant mode.
V. Ciupina, C. Lungu, R. Vladoiu, T-D. Epure, G. Prodan, C. Roşca, C. Porosnicu, I. Jepu, M. Belc, M. Prodan, I. Stanescu, C. Stefanov, M. Contulov, A. Mandes, V. Dinca, E. Vasile, V. Zarovschi, V. Nicolescu
SiC single-layer or multi-layer on C used to improve the oxidation resistance and tribological properties of C have been obtained by Thermionic Vacuum Arc (TVA) method. The 200nm thickness carbon thin films was deposed on glass or Si substrate and then 100÷500 nm thickness SiC successively layers on carbon thin film was deposed. The microstructure and mechanical characteristics of as-prepared SiC coating were investigated by Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDS), Electron Scattering Chemical Analysis (ESCA) and tribological techniques. Samples containing SiC single-layer or multi-layer coating on carbon were investigated up to 1000°C. The results of thermal treatments reveals the increase of oxidation resistance with increase of the number of SiC layers. The mechanism of oxidation protection is based on the reaction between SiC and elemental oxygen resulting SiO2 and CO. The tribological behavior of SiC coatings was evaluated with a tribometer with ball-on-disk configuration from CSM device with 6mm diameter sapphire ball, sliding speed in dry conditions being 0.2m/s, with normal contact loads of 0.5N, 1N, 1.5N and 2N, under unlubricated conditions. The friction coefficient on SiC was compared with the friction coefficient on uncoated carbon layer. Electrical surface resistance of SiC coating on carbon at different temperatures was measured comparing the potential drop on the sample with the potential drop on a series standard resistance in constant mode.
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