Projection objectives for deep-ultraviolet lithography typically have a dual-telecentric design, and the telecentricity in object space (mask) is idealized as zero. However, for combined illumination and objective lens systems, telecentricity matching on mask can result in a dramatic change in the pupil intensity distribution. Here, we propose a method of identifying the impact of the mismatch on the pupil fill and decoupling the pupil intensity balance from the telecentricity modulation. The technique is implemented in a user-defined program, and a series of simulations for a hypernumerical aperture immersion objective under off-axis illumination conditions verifies the method.
We presented the self-planar mesa structure for improving the performances of 850-nm oxide-confined vertical cavity
surface emitting lasers (VCSELs). Thermal simulation results demonstrated that the enhanced lateral heat dissipation and
decreased series resistance within VCSELs could be gained using the self-planar mesa structure. By employing the selfplanar
mesa, the maximum output power was increased from 8mW to more than 11mW, and the maximum wall-plug
efficiency was improved from 26% to 36% for the VCSEL with an oxide aperture size of 13 μm at 15°C.
Power scaling and beam divergence compression of 980 nm bottom-emitting vertical-cavity surface-emitting lasers
(VCSELs) are presented in this paper. First, the relationships among the reflectivity of the n-doped distributed Bragg
reflector, threshold current, and output power were analyzed, and the n-DBR reflectivity was optimized to achieve higher
slope efficiency in a relatively low threshold current. Second, the influence of the p-contact on the current density
distribution inside the active region was analyzed using the three-dimensional finite-element method. Uniform current
distribution was achieved by optimizing the diameter of the p-contact, and a consequent improvement in beam
divergence was observed. A low divergence of 5.4° was obtained for a single device with continuous-wave (CW) of 1.46
W at room temperature. The 8×8 VCSEL array showed a divergence angle of 10.2° at 4A. This array afforded a CW
output power of 1.95 W under an injected current of 4 A and a pulse output power of 115 W under a pulse drive current
of 130 A, a pulse width of 100 ns, and a repetition frequency of 100 Hz. VCSEL array chips were packaged in series to
form a “quasi-array” to further increase the output power. This series achieved a peak output power of 475 W under a
pulse drive current of 120 A.
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