Dr. Jing Wang Profile

Dr. Jing Wang

at Univ of South Florida

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Publications (3)

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Proceedings Article | 5 May 2010 Paper

Science and technology of MEMS/NEMS resonators: Si versus diamond platform materials

Mingke Xiong, I-Tsang Wu, Mian Wei, Jing Wang

Proceedings Volume 7679, 76791O (2010) https://doi.org/10.1117/12.852893

KEYWORDS: Resonators, Microelectromechanical systems, Acoustics, Silicon, Diamond, Silicon carbide, Nanoelectromechanical systems, Wireless communications, Scanning electron microscopy, Transceivers

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Having recently been demonstrated at frequencies over 1GHz with measured Q's>10,000^1-6, MEMS/NEMS resonators in silicon, SiC and CVD diamond structural materials have great potential for enabling resonant mass sensing down to zeptogram resolution as well as on-chip high-Q passives needed in wireless communication systems for frequency generation, translation and filtering. However, the acceptance of such devices for RF applications in present-day transceivers has been hindered so far by several remaining issues, including: (1) a frequency range lower than 5 GHz, (2) higher motional impedances than normally exhibited by macroscopic high-Q resonators, (3) limited linearity and power handling ability, and (4) insufficient frequency repeatability and stability. This paper reviews several material-centric strategies for alleviating the aforementioned issues. Given that resonance frequency is generally proportional to the acoustic velocity while energy dissipation and Q is also a strong function of the material properties, several deviceoriented and system-level performance-enhancing technologies will be discussed. Both capacitively-transduced and piezoelectrically-transduced resonators will be discussed with a particular emphasis on the employment of transducers with improved electromechanical coupling coefficient as the device-level method for lowering the motional impedance.

Proceedings Article | 5 May 2010 Paper

Metal-insulator-metal tunneling diode for uncooled infrared high-speed detectors

I-Tsang Wu, Nikolai Kislov, Jing Wang

Proceedings Volume 7679, 76792K (2010) https://doi.org/10.1117/12.853443

KEYWORDS: Diodes, Metals, Electrodes, Infrared detectors, Capacitance, Atomic layer deposition, Dielectrics, Infrared radiation, Infrared sensors, Sensors

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A metal-insulator-metal (MIM) tunneling diode having response time less than a picosecond (10^-12 second) is extremely important for mixers and detectors operating at terahertz and infrared frequencies. One of the key objectives of this work is to develop fabrication processes which are well-suited for mass production of nanogap MIM tunneling diodes with junction area in the range of 10^-2 μm² thus enabling the coveted terahertz frequencies due to the greatly reduced junction capacitance. A contemporary electron beam stepper of such resolution costs tens of millions and is not viable for mass production. This work employs standard photolithography and atomic layer deposition (ALD) methods, which allow formation of a micrometer-wide finger in the second metal layer that is separated from the first layer metal electrode by an ALD-deposited sidewall dielectric spacer, thus forming a nm-thick vertical tunneling junction. The junction area is defined by the width of the finger and the thickness of the electrode, while the junction thickness is controlled by the ALD deposited insulating layer. So far, by using a newly developed process, MIM tunneling diode with micron-scale self-aligned cross-fingers have been successfully demonstrated. Some preliminary DC characterizations have been carried out, and device characteristics such as responsivity, I-V, and C-V curves are documented. Ongoing research for modeling of MIM tunneling diode based on measured data and further reduction of the device junction area enabled by the new process will lead to MIM diode that could detect the infrared and terahertz spectra with greatly enhanced responsivity.

Proceedings Article | 4 May 2010 Paper

Development of infrared detector with slot antenna-coupled microbolometer

Kosol Son, Nikolai Kislov, Jing Wang

Proceedings Volume 7660, 76601D (2010) https://doi.org/10.1117/12.853937

KEYWORDS: Antennas, Infrared detectors, Silica, Capacitors, Infrared radiation, Sensors, Infrared detection, Terahertz radiation, Diodes, Detector development

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The current state-of-the-art infrared detection technology requires either exotic materials or cryogenic conditions to perform its duty. Implementing infrared detection by coupling infrared tuned antenna with a micro-bolometer offers a promising technological platform for mass production of un-cooled infrared detectors and imaging arrays. The design, fabrication, and characterization of a planar slotted antenna have been demonstrated on a thin silicon dioxide (SiO2) membrane for infrared detection. The planar slotted antenna was chosen due to its ease of fabrication and greater fabrication tolerance, higher gain and greater bandwidth coveted for the infrared applications. The employment of the SiO2 membrane technology mitigates the losses due to surface waves generated as the radiation coupling into the substrates. In addition, by retaining the membrane thickness to be less than a wavelength, the amount of interference is greatly reduced. A strategically designed planar slotted dipole antenna is implemented along with an integrated direct current (DC) block enabled by co-fabricated on-chip capacitors between the two DC patches to separate DC and high frequency signals without the need for sub-micron DC separation line. As a result of this revision, standard UV photolithography instead of e-beam lithography can be used to fabricate the infrared detectors for mass production. This research is considered as an important step toward our main goal, which is developing ultrafast infrared detector by coupling a planar slotted antenna with a metal insulator metal (MIM) tunneling diode.

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