Large area 2D Selective Area Growth (SAG) of Multi-Quantum Well (MQW) structures is a key methodology required for realization of monolithic multicolor arrays of Photonic Crystal Surface Emitting Lasers (PCSELs) We present a study of InGaAs/GaAs MQWs selectively grown in square SAG windows with dimensions up to 300 x 300 μm2, by MOCVD. The range of QW emission wavelengths and thickness enhancements are elucidated by room-temperature μ-Photoluminescence (PL) and Optical Profilometry (OP) mapping, respectively. It is shown that large areas, ⪅ 100 x 100 μm2, with uniform PL emission can be achieved within a PL tuning range of 86 nm.
We report epitaxially regrown Photonic Crystal Surface-Emitting Lasers (PCSELs) utilizing self-assembled InAs quantum dots (QDs) exhibiting lasing at room temperature. The ability to utilize both the ground-state (GS) and excited-state (ES) of the QDs allows multiple emission wavelengths from one heterostructure. The choice of the grating periods of the photonic crystal allows lasing from neighbouring devices at the GS (~1230 nm) or ES (~1140 nm) of the QDs, 90 nm apart in wavelength. The threshold current densities are 0.69 kA/cm2 and 1.05 kA/cm2 for GS and ES respectively. The effect of PC structures, specifically etch depth of the PC on lasing performance is also discussed.
Probabilistic Markov Chains modelling to define the relationship between microscopic scattering and macroscopic device level losses of photonic crystal surface emitting lasers (PCSEL) is reported. Here, we assume a priori knowledge of the microscopic scattering via simulation or measurement. The commissioning of the simulator, and convergence criteria are discussed.
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