The size-dependent variation of external-quantum-efficiency (EQE) has investigated by fabricating InGaN-based blue and near ultraviolet (NUV) micro light-emitting diodes (μ-LEDs) with mesa sizes from 10×10 μm2 to 250×250 μm2. We have compared the performances between blue and NUV μ-LEDs by measuring various optoelectronic characteristics, and found opposite trend between them. With reducing μ-LED sizes, the EQE of blue μ-LEDs decreases due to temperature-dependent efficiency droop which is consistently obtained by calculating the blueshift in peak-wavelengths and thermal-resistance. Contrary, the improved current spreading increases the light-extraction-efficiency which causes the EQE of small sized NUV μ-LEDs to increase.
We have fabricated InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) by top and bottom mirrors and investigated the sidewall light emission performances for backlight unit. Fabricated USE-LED has uniform light-output-power (LOP) and peak wavelength characteristics at each sidewall except poor light extraction efficiency (LEE) which is improved by fabricating ZnO nanorods on each sidewall. The optimized nanorods improve the LEE of USE-LED. Thus, the LOP increases >80% compared to the Reference-LED. Furthermore, the light-tools simulation results reveal that the LEE of nanorods-based USE-LED increases in lateral direction due to decrease in internal reflection of light.
Due to their unique properties, III-nitride vertical -cavity surface-emitting lasers (VCSELs) are expected to enable several applications ranging across communication, sensing and ranging and spectroscopy. Their technological feasibility however has been hindered by the lack of an electrically conductive, easily manufacturable, wide reflection stopband distributed Bragg reflector (DBR) to serve as the bottom reflector. Here we present the first electrically injected III-nitride VCSEL on an electrically conductive DBR using nanoporous (NP) GaN operating at roomtemperature. The measured threshold current density and the maximum light output power were 42 kA/cm2 and 0.17 mW, respectively, at 434 nm. Due to the electrical conductivity of the bottom NP GaN DBR, vertical injection was demonstrated and compared with intracavity injection. No change in the threshold current density, the slope efficiency or nearfield pattern was observed demonstrating the feasibility of efficient vertical injection in NP GaN VCSELs. Filamentary lasing was observed within the VCSEL aperture and its correlation with the lasing linewidth was studied.
There has been a lack of research for proper understanding of defects relaxing the strained lattice of InGaN/(Al)GaN quantum wells. This motivates us to find the relation among the defects, the piezoelectric field (FPZ), and the bandgap shrinkage under high injection. In this work, five similar-structure near-ultraviolet (NUV) light-emitting diodes (LEDs) are used to find systematically that the increase of point defects in the sample decreases both the peak wavelength and FPZ. This effect clearly indicates that the strain relaxation is induced by defects. We propose a model that consistently explain the observed changes in macroscopic characterizations of NUV LEDs.
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