As the minimum feature size of integrated circuits has decreased, it has produced a pressing need for a low cost method
of protecting commercial off-the-shelf integrated circuits from naturally occurring thermal neutrons. The limitations of
materials and manufacturing methods currently utilized pose major design and cost constraints in this area. Metalized
Polyhedral Oligomeric Silsesquioxanes, can be utilized to provide efficient radiation absorptive materials. The primary
advantage of using the nanoscopic metalized POSS technology is to disperse individual metal atoms at the 1.5 nm level
within a low density and easily applied polymeric carrier. Calculations and experimental data on the shielding
effectiveness of the metalized POSS conformal coating against thermal neutrons, warm X-rays, and gamma radiation are
presented.
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