Photonic Integrated Circuits (PICs) play a crucial role in shaping the future of quantum technology, communications, and sensor applications. With a transparency window ranging from ultraviolet to visible to mid-infrared light and a high bandgap of 6.2 eV, aluminium nitride (AlN) is ideal for a wide range of optical applications.
Within the upcoming PIC platform, we have designed, fabricated, and examined various ring resonators, comprised of coupling structures, waveguides and ring resonators, tailored for the optical L-band (1565 nm – 1625 nm). The arrangement of the coupling structures for incoupling the light from a laser source and outcoupling of the light to a detector allows for automatic probing and mapping of various structure modifications. With grating couplers integrated on the chip, these optical structures can be linked to a tunable laser source and a detector via optical fibers.
We compare the fabrication results of the optical nanostructures for the AlN-based devices with previous results from Si3N4-based structures. To ensure the ideal structure dimensions and to minimize deviations from the simulated design values, the AlN dry etch process has been investigated and improved.
As part of a future optical platform on-chip, we present a waveguide integrated tunable Fabry-Pérot Interferometer (FPI) for the long infrared wavelength range. The FPI consists of two parallel Bragg reflectors that are located at the ends of two waveguides facing each other. The waveguides are made of silicon and are suspended in air. The reflectors are realized as an alternating stack of silicon and air layers with high (H) and low (L) refractive index. The filter transmittance is evaluated by analytic calculations and electromagnetic finite difference time domain simulations. Filters with (HL)² layer stack show a full width half maximum of 270 nm and a peak transmittance of more than 25% at a wavelength of 9.4 μm at the first interference order in the simulation. It is evaluated by measurements. A MEMS actuator is used to tune the filter wavelength by changing the distance between both reflectors. A digital electrostatic actuator concept with a linear drive characteristic, designed for a large travel range up to 4 μm with a driving voltage of less than 30 V, is presented and evaluated together with the filter. The MEMS fabrication process for the structures is based on bonding and deep reactive ion etching (DRIE). The DRIE etch process was optimized, hereafter achieving a reduced roughness of less than 3 nm of the waveguide sidewalls. For transmission measurements the silicon waveguides are coupled to a laser source and a detector using optical fibers together with optical couplers on the chip. The filter performance was characterized in the range from 9μm to 9.4 μm.
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