Microbolometer detector development and production processes have been studied intensely at ASELSAN for the last several years. Researches have been conducted so as to develop uncooled Focal Plane Arrays (FPAs) with high resolution and smaller pixel pitch. Test results show that SAFIR640 detectors have high performance level and low time constant which make them ideal for military and civilian applications. SAFIR640 microfabrication has been performed on 8’’ CMOS ROIC wafers which are also designed by ASELSAN. A double layer 17 μm pitch microbolometer structure is designed with an active material layer of VOx. 640×480 format SAFIR640 detectors with high TCR and low noise level are successfully fabricated and integrated into a TEC-less system. The produced detectors have low NETD (<30 mK) and low time constant values (<12 ms) values according to the test results. In this paper, electro-optical characterizations and the performance measurements of the SAFIR640 detectors have been presented.
Microbolometer detectors have drawn attention due to their advantages such as small dimensions, light weight, low power consumption and no cooling requirement. In recent years, studies regarding the microbolometers have accelerated. Research on uncooled infrared microbolometer detectors was initiated at ASELSAN in 2014. As result of these activities, microbolometers with high TCR and low 1/f noise level have been achieved based on vanadium oxide active material. Pixel structures with high fill factor ratios are accomplished using double layer pixel architecture and high responsivity values were obtained by FPA optimizations. 640 x 480 format and 17 μm pixel pitch microbolometer FPAs along with VOx sensing layer were produced. These detectors have demonstrated state of the art NETD values (< 30 mK @ f/1) and with such properties that could be used in various applications which require high frame rates due to their low time constant values (< 12 ms). FPA fabrication has been performed on 8” CMOS ROIC wafers which are also designed by ASELSAN. 17 μm pixel pitch 640 x 480 format ROIC has been developed for resistive microbolometer detector arrays. ROIC wafers were fabricated using 0.18 μm CMOS process where 3.3 V analog and 1.8 V digital supplies are used. The ROIC has 4 analog video outputs and 2 analog reference outputs. It can be operated at 1, 2 or 4 output modes depending on the frame rate requirement. In 2-output mode of operation power consumption of the ROIC is less than 150 mW. In this paper, the details of the microbolometer detectors including the ROIC design, vacuum packaging and detector performances are presented.
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