Mr. Kazuaki Matsui Profile

Kazuaki Matsui

at Toppan Printing Co Ltd

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Proceedings Article | 26 August 2024 Paper

Evaluation and countermeasures verification of haze on ArF PSM

Kyoko Kuroki, Kazuaki Matsui, Yosuke Kojima

Proceedings Volume 13177, 131770I (2024) https://doi.org/10.1117/12.3034876

KEYWORDS: Photomasks, Molybdenum, Phase shifts, Lithography

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Haze is a defect such as particle that is generated on the photomask during exposure, consequently reducing the lifetime of the photomask. Therefore, various investigation has been done to clarify the root causes of haze, and countermeasures have been taken according to the causes. However, in recent years, it has been discovered that there is a new mode of haze caused by the photomask material itself. The molybdenum, derived from MoSi phase shift films, was generated as particles such as molybdenum oxide and ammonium molybdate during ArF exposure. In this paper, the results of the verification evaluation of the hypothetical cause of molybdenum haze and countermeasures are reported. Based on the hypothesis that the cause of molybdenum haze may be molybdenum ion residue dissolved in the photomask cleaning solution, as a result of verification evaluation using an Accelerated irradiation Test Bed (ATB), a large amount of haze occurred on the quartz part of the photomask, so the hypothesis was likely to be correct. Therefore, a phase shift film with a protection layer was devised to prevent the MoSi film from being exposed to the cleaning solution. The photomasks made of this new phase shift film had more than four times the haze resistance of the conventional photomasks and had less CD change after irradiation. In addition, the processability and lithography performance of the new structure photomask were the same as that of the conventional photomask, and it was confirmed that they were a promising photomask.

Proceedings Article | 21 November 2023 Poster + Paper

Mask optimization approach for wafer LCDU improvement in ArF lithography

Kenjiro Ichikawa, Itaru Yoshida, Kazuaki Matsui, Yosuke Kojima, Tatsuya Nagatomo, Mitsuharu Yamana

Proceedings Volume 12751, 127511H (2023) https://doi.org/10.1117/12.2688551

KEYWORDS: Semiconducting wafers, Lithography, Error analysis, Printing, Transmittance, Source mask optimization, Wafer testing, Optical proximity correction, Optical lithography, Photomasks

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Extreme ultra violet lithography is one of the most promising technologies for next-generation and already applied to critical layers for imaging 7-nm node and beyond. On the other hand, immersion ArF (iArF) lithography also continues to be applied to some critical layers by utilizing Multiple Patterning (MP). High accurate overlay control is required to reduce Edge Placement Error (EPE). In general, global errors on mask such as Critical Dimension Uniformity (CDU) and Image Placement (IP) are known as critical factors affecting EPE. Recently, the local variations on wafer are also discussed as non-negligible factors, especially for advanced technology node. Local CDU (LCDU) is one of the most typical local variations, therefore its requirements are getting more severe. In this paper, the mask impact on wafer LCDU in ArF lithography was investigated. In order to characterize the mask contribution, we designed the mask which has the patterns with various mask LCDU and lithographic performances. According to these evaluations, it was confirmed that mask LCDU, Normalized Image Log Slope (NILS) and Mask Error Enhancement Factor (MEEF) are major contributors to wafer LCDU. Based on the results, we explored wafer LCDU improvement by mask optimization and demonstrated its benefit on wafer.

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