Exploring the novel application to the quantum optics, the periodic crystallographic-polarity-inverted GaN waveguides were fabricated. In addition to the successful periodic reversal of the crystallographic orientations, periodic grating structures were formed on the surface due to the slight difference in the growth rates for different polarities, which gives the occurrence of the well-known photonic band structures. In this work, basic optical properties were investigated utilizing the variable-angle optical reflectance measurements on these waveguides with one-dimensional periodic grating structures, in order to obtain their photonic band structures. In addition to the optical interference fringes, clear reflectance dips originated from the resonance between the incident light and allowed waveguide modes appeared, aside from a weak resonant feature due to the coupling of the diffracted light to the evanescent mode on the grating surface, known as Wood's anomalies. Taking into account the refractive index dispersions and the zone-folding effects invoked by the grating, the origins of all the resonant features are successfully elucidated. Especially in case of resonant coupling to the waveguide modes, the corresponding orders of both the grating diffractions and the guided modes are assigned. Based on these assignments, the possible configurations of the wavelength conversions are discussed.
The MOVPE growth properties of GaAsN and InAsN in H2 and N2 mixed carrier gases are studied. The N contents of
the GaAsN and InAsN films increase with increasing the N2/(H2+N2) ratio in the H2 and N2 mixed carrier gas. The
growth rate reduction of GaAsN films in higher N2/(H2+N2) ratio is explained by the smaller diffusion coefficients of
precursors. The pyrolysis of 1,1-dimethylhydrazine (DMHy) is investigated by a quadrupole mass spectrometer (QMS)
that is combined with the MOVPE growth reactor. At lower temperatures, the pyrolysis of DMHy in H2 carrier gas is
higher than that in N2 carrier gas. The results indicate that the higher N contents at the higher N2/(H2+N2) ratios in the
mixed carrier gases are attributed to the suppression of the decomposition of III-V-N films as NHx. The higher reactor
pressure also exhibits higher N contents in each carrier gas. It is interpreted as the effect of the faster growth rates and
the higher DMHy pyrolysis.
In this work, the detailed MOVPE growth properties of InAsN films with N contents up to 2.54% and the
photoluminescence properties in relation with the carrier concentrations were investigated. For the MOVPE growth,
tertiary-butylarsine (TBAs) and 1,1-dimethylhydrazine (DMHy) were used as the group-V precursors. The efficient
growth conditions for the InAsN films with higher N contents are a higher DMHy/V ratio and a lower As/In ratio. The
photoluminescence emission from the post-annealed InAsN films exhibits a blue-shift with increasing the N content,
which is contrary to the expected bandgap bowing. The same blue-shift behavior was observed in InAsN films grown on
SI-GaAs(001) substrate by RF-MBE. As a result of temperature dependent photoluminescence measurements under
various excitation powers, it was found that the blue-shift of the PL-peak energy of the InAsN films was attributed to the
band-filling effect due to the degenerate electrons induced by the N incorporation.
The growth and characterization of some cubic III-nitride films on suitable cubic substrates have been done, namely, c-
GaN on GaAs by MOVPE, c-GaN and c-AlGaN on MgO by RF-MBE, and c-InN and c-InGaN (In-rich) on YSZ by RFMBE.
This series of study has been much focused on the cubic-phase purity as dependent on the respective growth
conditions and resulting electrical and optical properties. For c-GaN and c-InN films, a cubic-phase purity higher than
95% is attained in spite of the metastable nature of the cubic III-nitrides. However, for c-AlGaN and c-InGaN films, the
cubic-phase purity is rapidly degraded with significant incorporation of the hexagonal phase through stacking faults on
cubic {111} faces which may be exposed on the roughened growing or substrate surface. It has been shown that the
electron mobilities in c-GaN and c-AlGaN films are much related to phase purity.
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